Low-power InP-HEMT switch ICs integrating miniaturized 2×2 switches for 10-Gb/s systems

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Veröffentlicht in:	IEEE journal of solid-state circuits 2006-02, Vol.41 (2), p.452-460
Hauptverfasser:	KAMITSUNA, Hideki, YAMANE, Yasuro, TOKUMITSU, Masami, SUGAHARA, Hirohiko, MURAGUCHI, Masahiro
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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doi_str_mv	10.1109/JSSC.2005.862354
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source	IEEE Electronic Library (IEL)
subjects	Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
title	Low-power InP-HEMT switch ICs integrating miniaturized 2×2 switches for 10-Gb/s systems
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