Fabrication and characteristics of multi-terminal SINIS devices
We fabricated and measured multi-terminal SINIS devices (where S, I, and N denote a superconductor, an insulator, and a normal metal, respectively) with the Nb/Al/AlO/sub x//Al/AlO/sub x//Al/Nb structure. The multilayered SINIS structure was fabricated in-situ using sputter deposition of Nb and Al,...
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| Veröffentlicht in: | IEEE transactions on applied superconductivity 2005-06, Vol.15 (2), p.129-132 |
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| creator | Nevirkovets, I.P. Chernyashevskyy, O. Ketterson, J.B. |
| description | We fabricated and measured multi-terminal SINIS devices (where S, I, and N denote a superconductor, an insulator, and a normal metal, respectively) with the Nb/Al/AlO/sub x//Al/AlO/sub x//Al/Nb structure. The multilayered SINIS structure was fabricated in-situ using sputter deposition of Nb and Al, and thermal oxidation of the Al layers to grow the tunnel barriers. Devices with a characteristic size of about 10 /spl mu/m were formed via an optical-lithography process that included making an electrical contact to the middle Al layer (16-19 nm thick). Current-voltage characteristics of the devices were measured in different modes (i. e., by feeding the current across the whole device, through each of the junctions, and through the middle Al film) at low temperatures (1.4-4.2 K). Specifically, the devices were tested in a transistor-like configuration to explore the influence of current injection through a SIN junction and the N film on the Josephson critical current and quasiparticle characteristic of the SINIS junction as a whole, and on the characteristics of the second junction. |
| doi_str_mv | 10.1109/TASC.2005.849712 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_912077067</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1439593</ieee_id><sourcerecordid>1365154097</sourcerecordid><originalsourceid>FETCH-LOGICAL-c415t-3fe777b066be0c8ea48c042b8a114ea355e0984cc7b82566a1c88ab4d892e8d73</originalsourceid><addsrcrecordid>eNqNkc1Lw0AQxYMoWKt3wUsQFC-ps1_J7kmkWC0UPVTPy2Q7wZU0qbup4H9vQgXBg3iaYeb3ZuC9JDllMGEMzPXz7XI64QBqoqUpGN9LRkwpnXHF1H7fg2KZ5lwcJkcxvgEwqaUaJTczLIN32Pm2SbFZpe4VA7qOgo-ddzFtq3S9rTuf9aO1b7BOl_PH-TJd0Yd3FI-TgwrrSCffdZy8zO6epw_Z4ul-Pr1dZE4y1WWioqIoSsjzksBpQqkdSF5qZEwSCqUIjJbOFaXmKs-ROa2xlCttOOlVIcbJ5e7uJrTvW4qdXfvoqK6xoXYbLddMGMPNP0AQSireg1d_gkzkvXUSzPD8_Bf61m5D70W0hnEoCsgHCHaQC22MgSq7CX6N4dMysENEdojIDhHZXUS95OL7LkaHdRWwcT7-6HLDcyEH7mzHeSL6WUthlBHiCy2Jl34</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912077067</pqid></control><display><type>article</type><title>Fabrication and characteristics of multi-terminal SINIS devices</title><source>IEEE Electronic Library (IEL)</source><creator>Nevirkovets, I.P. ; Chernyashevskyy, O. ; Ketterson, J.B.</creator><creatorcontrib>Nevirkovets, I.P. ; Chernyashevskyy, O. ; Ketterson, J.B.</creatorcontrib><description>We fabricated and measured multi-terminal SINIS devices (where S, I, and N denote a superconductor, an insulator, and a normal metal, respectively) with the Nb/Al/AlO/sub x//Al/AlO/sub x//Al/Nb structure. The multilayered SINIS structure was fabricated in-situ using sputter deposition of Nb and Al, and thermal oxidation of the Al layers to grow the tunnel barriers. Devices with a characteristic size of about 10 /spl mu/m were formed via an optical-lithography process that included making an electrical contact to the middle Al layer (16-19 nm thick). Current-voltage characteristics of the devices were measured in different modes (i. e., by feeding the current across the whole device, through each of the junctions, and through the middle Al film) at low temperatures (1.4-4.2 K). Specifically, the devices were tested in a transistor-like configuration to explore the influence of current injection through a SIN junction and the N film on the Josephson critical current and quasiparticle characteristic of the SINIS junction as a whole, and on the characteristics of the second junction.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/TASC.2005.849712</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum ; Applied sciences ; Contacts ; Current-voltage characteristics ; Deposition ; Devices ; Electrical engineering. Electrical power engineering ; Electrical junctions ; Electronics ; Exact sciences and technology ; Fabrication ; Feeding ; Insulation ; Insulators ; Interfaces ; Josephson device fabrication ; Josephson effect ; Metal-insulator structures ; Microelectronic fabrication (materials and surfaces technology) ; multilayers ; Niobium ; Optical devices ; Optical films ; Oxidation ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Sputtering ; superconducting devices ; Superconductivity ; Transistors ; Various equipment and components</subject><ispartof>IEEE transactions on applied superconductivity, 2005-06, Vol.15 (2), p.129-132</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c415t-3fe777b066be0c8ea48c042b8a114ea355e0984cc7b82566a1c88ab4d892e8d73</citedby><cites>FETCH-LOGICAL-c415t-3fe777b066be0c8ea48c042b8a114ea355e0984cc7b82566a1c88ab4d892e8d73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1439593$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1439593$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16926342$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Nevirkovets, I.P.</creatorcontrib><creatorcontrib>Chernyashevskyy, O.</creatorcontrib><creatorcontrib>Ketterson, J.B.</creatorcontrib><title>Fabrication and characteristics of multi-terminal SINIS devices</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>We fabricated and measured multi-terminal SINIS devices (where S, I, and N denote a superconductor, an insulator, and a normal metal, respectively) with the Nb/Al/AlO/sub x//Al/AlO/sub x//Al/Nb structure. The multilayered SINIS structure was fabricated in-situ using sputter deposition of Nb and Al, and thermal oxidation of the Al layers to grow the tunnel barriers. Devices with a characteristic size of about 10 /spl mu/m were formed via an optical-lithography process that included making an electrical contact to the middle Al layer (16-19 nm thick). Current-voltage characteristics of the devices were measured in different modes (i. e., by feeding the current across the whole device, through each of the junctions, and through the middle Al film) at low temperatures (1.4-4.2 K). Specifically, the devices were tested in a transistor-like configuration to explore the influence of current injection through a SIN junction and the N film on the Josephson critical current and quasiparticle characteristic of the SINIS junction as a whole, and on the characteristics of the second junction.</description><subject>Aluminum</subject><subject>Applied sciences</subject><subject>Contacts</subject><subject>Current-voltage characteristics</subject><subject>Deposition</subject><subject>Devices</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electrical junctions</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Feeding</subject><subject>Insulation</subject><subject>Insulators</subject><subject>Interfaces</subject><subject>Josephson device fabrication</subject><subject>Josephson effect</subject><subject>Metal-insulator structures</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>multilayers</subject><subject>Niobium</subject><subject>Optical devices</subject><subject>Optical films</subject><subject>Oxidation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sputtering</subject><subject>superconducting devices</subject><subject>Superconductivity</subject><subject>Transistors</subject><subject>Various equipment and components</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkc1Lw0AQxYMoWKt3wUsQFC-ps1_J7kmkWC0UPVTPy2Q7wZU0qbup4H9vQgXBg3iaYeb3ZuC9JDllMGEMzPXz7XI64QBqoqUpGN9LRkwpnXHF1H7fg2KZ5lwcJkcxvgEwqaUaJTczLIN32Pm2SbFZpe4VA7qOgo-ddzFtq3S9rTuf9aO1b7BOl_PH-TJd0Yd3FI-TgwrrSCffdZy8zO6epw_Z4ul-Pr1dZE4y1WWioqIoSsjzksBpQqkdSF5qZEwSCqUIjJbOFaXmKs-ROa2xlCttOOlVIcbJ5e7uJrTvW4qdXfvoqK6xoXYbLddMGMPNP0AQSireg1d_gkzkvXUSzPD8_Bf61m5D70W0hnEoCsgHCHaQC22MgSq7CX6N4dMysENEdojIDhHZXUS95OL7LkaHdRWwcT7-6HLDcyEH7mzHeSL6WUthlBHiCy2Jl34</recordid><startdate>20050601</startdate><enddate>20050601</enddate><creator>Nevirkovets, I.P.</creator><creator>Chernyashevskyy, O.</creator><creator>Ketterson, J.B.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>8BQ</scope><scope>H8D</scope></search><sort><creationdate>20050601</creationdate><title>Fabrication and characteristics of multi-terminal SINIS devices</title><author>Nevirkovets, I.P. ; Chernyashevskyy, O. ; Ketterson, J.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c415t-3fe777b066be0c8ea48c042b8a114ea355e0984cc7b82566a1c88ab4d892e8d73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Aluminum</topic><topic>Applied sciences</topic><topic>Contacts</topic><topic>Current-voltage characteristics</topic><topic>Deposition</topic><topic>Devices</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electrical junctions</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Feeding</topic><topic>Insulation</topic><topic>Insulators</topic><topic>Interfaces</topic><topic>Josephson device fabrication</topic><topic>Josephson effect</topic><topic>Metal-insulator structures</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>multilayers</topic><topic>Niobium</topic><topic>Optical devices</topic><topic>Optical films</topic><topic>Oxidation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sputtering</topic><topic>superconducting devices</topic><topic>Superconductivity</topic><topic>Transistors</topic><topic>Various equipment and components</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nevirkovets, I.P.</creatorcontrib><creatorcontrib>Chernyashevskyy, O.</creatorcontrib><creatorcontrib>Ketterson, J.B.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>METADEX</collection><collection>Aerospace Database</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nevirkovets, I.P.</au><au>Chernyashevskyy, O.</au><au>Ketterson, J.B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and characteristics of multi-terminal SINIS devices</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>2005-06-01</date><risdate>2005</risdate><volume>15</volume><issue>2</issue><spage>129</spage><epage>132</epage><pages>129-132</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>We fabricated and measured multi-terminal SINIS devices (where S, I, and N denote a superconductor, an insulator, and a normal metal, respectively) with the Nb/Al/AlO/sub x//Al/AlO/sub x//Al/Nb structure. The multilayered SINIS structure was fabricated in-situ using sputter deposition of Nb and Al, and thermal oxidation of the Al layers to grow the tunnel barriers. Devices with a characteristic size of about 10 /spl mu/m were formed via an optical-lithography process that included making an electrical contact to the middle Al layer (16-19 nm thick). Current-voltage characteristics of the devices were measured in different modes (i. e., by feeding the current across the whole device, through each of the junctions, and through the middle Al film) at low temperatures (1.4-4.2 K). Specifically, the devices were tested in a transistor-like configuration to explore the influence of current injection through a SIN junction and the N film on the Josephson critical current and quasiparticle characteristic of the SINIS junction as a whole, and on the characteristics of the second junction.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TASC.2005.849712</doi><tpages>4</tpages></addata></record> |
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| subjects | Aluminum Applied sciences Contacts Current-voltage characteristics Deposition Devices Electrical engineering. Electrical power engineering Electrical junctions Electronics Exact sciences and technology Fabrication Feeding Insulation Insulators Interfaces Josephson device fabrication Josephson effect Metal-insulator structures Microelectronic fabrication (materials and surfaces technology) multilayers Niobium Optical devices Optical films Oxidation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sputtering superconducting devices Superconductivity Transistors Various equipment and components |
| title | Fabrication and characteristics of multi-terminal SINIS devices |
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