Tunneling Field-Effect Transistor: Effect of Strain and Temperature on Tunneling Current

We report the first study of the effect of strain on tunneling field-effect transistor (TFET) characteristics. Double-gate silicon TFETs were employed. It was found that tensile strain increases the drain current, whereas compressive strain reduces the drain current. This is attributed to strain-ind...

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Veröffentlicht in:	IEEE electron device letters 2009-09, Vol.30 (9), p.981-983
Hauptverfasser:	Peng-Fei Guo, Li-Tao Yang, Yue Yang, Lu Fan, Gen-Quan Han, Samudra, G.S., Yee-Chia Yeo
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bacteria Capacitive sensors Devices Double gate Drains Electric variables Electrical junctions Electronics Exact sciences and technology FETs Guidelines Photonic band gap Physics Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Strain Stress temperature Temperature dependence Tensile strain Transistors Tunneling tunneling field-effect transistor (TFET)
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