RESET Mechanism of TiOx Resistance-Change Memory Device
In this letter, the physical mechanisms of resetting a TiOx resistance-change memory device are explored for both unipolar and bipolar switching modes. It is observed that the statistical distributions of switching parameters are very different for the two types of switching modes. The data support...
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| Veröffentlicht in: | IEEE electron device letters 2009-07, Vol.30 (7), p.733-735 |
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| container_title | IEEE electron device letters |
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| creator | Wei Wang Fujita, S. Wong, S.S. |
| description | In this letter, the physical mechanisms of resetting a TiOx resistance-change memory device are explored for both unipolar and bipolar switching modes. It is observed that the statistical distributions of switching parameters are very different for the two types of switching modes. The data support previous evidence that thermal dissolution of the conductive filament (CF) is the mechanism for unipolar reset, while local redox reaction is responsible for bipolar reset. It is found that the CF is destroyed during unipolar switching but can be reused during bipolar switching. |
| doi_str_mv | 10.1109/LED.2009.2021001 |
| format | Article |
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It is observed that the statistical distributions of switching parameters are very different for the two types of switching modes. The data support previous evidence that thermal dissolution of the conductive filament (CF) is the mechanism for unipolar reset, while local redox reaction is responsible for bipolar reset. It is found that the CF is destroyed during unipolar switching but can be reused during bipolar switching.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2009.2021001</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aerospace industry ; Applied sciences ; Bipolar switching ; Data storage ; Devices ; Electrodes ; Electronics ; Exact sciences and technology ; Fabrication ; Filaments ; Guidelines ; Magnetic and optical mass memories ; Memory devices ; Nonvolatile memory ; Redox reactions ; reset ; resistance-change memory ; Scalability ; Statistical distributions ; Storage and reproduction of information ; Switching ; Thermal conductivity ; Titanium ; titanium oxide (TiOx) ; Titanium oxides ; unipolar switching ; Voltage</subject><ispartof>IEEE electron device letters, 2009-07, Vol.30 (7), p.733-735</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c415t-4835faa23a72e208477ee9d8c01eef889c9203d6e6374d29e3648fdc7834ecd83</citedby><cites>FETCH-LOGICAL-c415t-4835faa23a72e208477ee9d8c01eef889c9203d6e6374d29e3648fdc7834ecd83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4982706$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4982706$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21829411$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Wei Wang</creatorcontrib><creatorcontrib>Fujita, S.</creatorcontrib><creatorcontrib>Wong, S.S.</creatorcontrib><title>RESET Mechanism of TiOx Resistance-Change Memory Device</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>In this letter, the physical mechanisms of resetting a TiOx resistance-change memory device are explored for both unipolar and bipolar switching modes. It is observed that the statistical distributions of switching parameters are very different for the two types of switching modes. The data support previous evidence that thermal dissolution of the conductive filament (CF) is the mechanism for unipolar reset, while local redox reaction is responsible for bipolar reset. It is found that the CF is destroyed during unipolar switching but can be reused during bipolar switching.</description><subject>Aerospace industry</subject><subject>Applied sciences</subject><subject>Bipolar switching</subject><subject>Data storage</subject><subject>Devices</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Filaments</subject><subject>Guidelines</subject><subject>Magnetic and optical mass memories</subject><subject>Memory devices</subject><subject>Nonvolatile memory</subject><subject>Redox reactions</subject><subject>reset</subject><subject>resistance-change memory</subject><subject>Scalability</subject><subject>Statistical distributions</subject><subject>Storage and reproduction of information</subject><subject>Switching</subject><subject>Thermal conductivity</subject><subject>Titanium</subject><subject>titanium oxide (TiOx)</subject><subject>Titanium oxides</subject><subject>unipolar switching</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0UlLAzEUAOAgCtbqXfAyCIqX0WyT5SjtuEClUOs5hMwbTZmlTlqx_94MLT140EtyeN97vAWhc4JvCcH6bpKPbynGOj6UYEwO0IBkmUpxJtghGmDJScoIFsfoJIRFBJxLPkBylr_m8-QF3IdtfKiTtkzmfvqdzCD4sLKNg3QUQ-8QTd12m2QMX97BKToqbRXgbPcP0dtDPh89pZPp4_PofpI6TrJVyhXLSmsps5ICxYpLCaAL5TABKJXSTlPMCgGCSV5QDUxwVRZOKsbBFYoN0fW27rJrP9cQVqb2wUFV2QbadTDR0zh_9i-MStGM0whv_oRESEIlUVxEevmLLtp118R5jSZxz4KLvkO8Ra5rQ-igNMvO17bbGIJNfxoTT2P605jdaWLK1a6uDc5WZRfX7MM-j8ZONSe9u9g6DwD7MNeKSizYDwb_kso</recordid><startdate>20090701</startdate><enddate>20090701</enddate><creator>Wei Wang</creator><creator>Fujita, S.</creator><creator>Wong, S.S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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It is observed that the statistical distributions of switching parameters are very different for the two types of switching modes. The data support previous evidence that thermal dissolution of the conductive filament (CF) is the mechanism for unipolar reset, while local redox reaction is responsible for bipolar reset. It is found that the CF is destroyed during unipolar switching but can be reused during bipolar switching.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2009.2021001</doi><tpages>3</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aerospace industry Applied sciences Bipolar switching Data storage Devices Electrodes Electronics Exact sciences and technology Fabrication Filaments Guidelines Magnetic and optical mass memories Memory devices Nonvolatile memory Redox reactions reset resistance-change memory Scalability Statistical distributions Storage and reproduction of information Switching Thermal conductivity Titanium titanium oxide (TiOx) Titanium oxides unipolar switching Voltage |
| title | RESET Mechanism of TiOx Resistance-Change Memory Device |
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