A CMOS STI-Bound Single-Photon Avalanche Diode With 27-ps Timing Resolution and a Reduced Diffusion Tail
Single-photon avalanche diodes (SPADs) measure individual photons' time of arrival. Low detector jitter is required in many SPAD applications. This letter describes a method for significantly reducing SPAD jitter using an area-efficient shallow-trench-isolation guard ring. The structure prevent...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2009-06, Vol.30 (6), p.641-643 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 643 |
|---|---|
| container_issue | 6 |
| container_start_page | 641 |
| container_title | IEEE electron device letters |
| container_volume | 30 |
| creator | Hsu, M.J. Esener, S.C. Finkelstein, H. |
| description | Single-photon avalanche diodes (SPADs) measure individual photons' time of arrival. Low detector jitter is required in many SPAD applications. This letter describes a method for significantly reducing SPAD jitter using an area-efficient shallow-trench-isolation guard ring. The structure prevents lateral drift and diffusion of charge carriers, resulting in improved timing resolution. Experimental results of the device, fabricated in a 0.18-mum CMOS technology, are presented. The timing resolution of the SPAD is 27-ps full-width at half-maximum. Importantly, the diffusion tail exhibits only 96-ps full-width at hundredth-maximum, a three times improvement over previously published SPAD results. The reduced jitter can be translated to improved bit error rates in quantum key distribution systems, faster bit rates in pulse position modulation optical links, and greater contrast in high-resolution fluorescence lifetime imaging microscopy. |
| doi_str_mv | 10.1109/LED.2009.2019974 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_912025961</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4914830</ieee_id><sourcerecordid>2543451901</sourcerecordid><originalsourceid>FETCH-LOGICAL-c384t-7f02387c4b68d03edc7ed38b6ca28bc9e759c423d6d1150b6f9b07673c7d230f3</originalsourceid><addsrcrecordid>eNp9kc1rGzEQxUVooW6ae6EXUWjJZdPR9-roOp_gklC75Ci0krZWWK_c1W4h_31lbHLIoZcZGP3eME8PoY8ELggB_W15dXlBAXQpRGvFT9CMCFFXICR7g2agOKkYAfkOvc_5CYBwrvgMbeZ48eN-hVfru-p7mnqPV7H_3YXqYZPG1OP5X9vZ3m0CvozJB_wYxw2mqtplvI7bguKfIaduGmOBbZHbMvCTC74I2nbK-_naxu4DetvaLoezYz9Fv66v1ovbanl_c7eYLyvHaj5WqgXKauV4I2sPLHingmd1I52ldeN0UEI7TpmXnhABjWx1A0oq5pSnDFp2ir4e9u6G9GcKeTTbmF3oiouQpmwYF0JRpQp4_l-QSEWo1DWDgn5-hT6laeiLDaMJBSq0JAWCA-SGlPMQWrMb4tYOz4aA2UdkSkRmH5E5RlQkX457bXa2a4fy0zG_6ChRShRzhft04GII4eWZa8L31_0DOu-Wdw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912025961</pqid></control><display><type>article</type><title>A CMOS STI-Bound Single-Photon Avalanche Diode With 27-ps Timing Resolution and a Reduced Diffusion Tail</title><source>IEEE Electronic Library (IEL)</source><creator>Hsu, M.J. ; Esener, S.C. ; Finkelstein, H.</creator><creatorcontrib>Hsu, M.J. ; Esener, S.C. ; Finkelstein, H.</creatorcontrib><description>Single-photon avalanche diodes (SPADs) measure individual photons' time of arrival. Low detector jitter is required in many SPAD applications. This letter describes a method for significantly reducing SPAD jitter using an area-efficient shallow-trench-isolation guard ring. The structure prevents lateral drift and diffusion of charge carriers, resulting in improved timing resolution. Experimental results of the device, fabricated in a 0.18-mum CMOS technology, are presented. The timing resolution of the SPAD is 27-ps full-width at half-maximum. Importantly, the diffusion tail exhibits only 96-ps full-width at hundredth-maximum, a three times improvement over previously published SPAD results. The reduced jitter can be translated to improved bit error rates in quantum key distribution systems, faster bit rates in pulse position modulation optical links, and greater contrast in high-resolution fluorescence lifetime imaging microscopy.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2009.2019974</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Avalanche breakdown ; Avalanche diodes ; avalanche photodiodes ; Charge carriers ; CMOS ; CMOS technology ; cryptography ; Design. Technologies. Operation analysis. Testing ; Detectors ; Devices ; Diffusion ; Diodes ; Electronics ; Exact sciences and technology ; fluorescence ; General equipment and techniques ; Guards ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Integrated circuits ; Jitter ; Optical microscopy ; Optoelectronic devices ; Physics ; Pulse modulation ; Pulse position modulation ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing ; silicon radiation detectors ; Tail ; Time measurement ; Time measurements ; Timing</subject><ispartof>IEEE electron device letters, 2009-06, Vol.30 (6), p.641-643</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-7f02387c4b68d03edc7ed38b6ca28bc9e759c423d6d1150b6f9b07673c7d230f3</citedby><cites>FETCH-LOGICAL-c384t-7f02387c4b68d03edc7ed38b6ca28bc9e759c423d6d1150b6f9b07673c7d230f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4914830$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4914830$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21775076$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hsu, M.J.</creatorcontrib><creatorcontrib>Esener, S.C.</creatorcontrib><creatorcontrib>Finkelstein, H.</creatorcontrib><title>A CMOS STI-Bound Single-Photon Avalanche Diode With 27-ps Timing Resolution and a Reduced Diffusion Tail</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Single-photon avalanche diodes (SPADs) measure individual photons' time of arrival. Low detector jitter is required in many SPAD applications. This letter describes a method for significantly reducing SPAD jitter using an area-efficient shallow-trench-isolation guard ring. The structure prevents lateral drift and diffusion of charge carriers, resulting in improved timing resolution. Experimental results of the device, fabricated in a 0.18-mum CMOS technology, are presented. The timing resolution of the SPAD is 27-ps full-width at half-maximum. Importantly, the diffusion tail exhibits only 96-ps full-width at hundredth-maximum, a three times improvement over previously published SPAD results. The reduced jitter can be translated to improved bit error rates in quantum key distribution systems, faster bit rates in pulse position modulation optical links, and greater contrast in high-resolution fluorescence lifetime imaging microscopy.</description><subject>Applied sciences</subject><subject>Avalanche breakdown</subject><subject>Avalanche diodes</subject><subject>avalanche photodiodes</subject><subject>Charge carriers</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>cryptography</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Detectors</subject><subject>Devices</subject><subject>Diffusion</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>fluorescence</subject><subject>General equipment and techniques</subject><subject>Guards</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Integrated circuits</subject><subject>Jitter</subject><subject>Optical microscopy</subject><subject>Optoelectronic devices</subject><subject>Physics</subject><subject>Pulse modulation</subject><subject>Pulse position modulation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</subject><subject>silicon radiation detectors</subject><subject>Tail</subject><subject>Time measurement</subject><subject>Time measurements</subject><subject>Timing</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1rGzEQxUVooW6ae6EXUWjJZdPR9-roOp_gklC75Ci0krZWWK_c1W4h_31lbHLIoZcZGP3eME8PoY8ELggB_W15dXlBAXQpRGvFT9CMCFFXICR7g2agOKkYAfkOvc_5CYBwrvgMbeZ48eN-hVfru-p7mnqPV7H_3YXqYZPG1OP5X9vZ3m0CvozJB_wYxw2mqtplvI7bguKfIaduGmOBbZHbMvCTC74I2nbK-_naxu4DetvaLoezYz9Fv66v1ovbanl_c7eYLyvHaj5WqgXKauV4I2sPLHingmd1I52ldeN0UEI7TpmXnhABjWx1A0oq5pSnDFp2ir4e9u6G9GcKeTTbmF3oiouQpmwYF0JRpQp4_l-QSEWo1DWDgn5-hT6laeiLDaMJBSq0JAWCA-SGlPMQWrMb4tYOz4aA2UdkSkRmH5E5RlQkX457bXa2a4fy0zG_6ChRShRzhft04GII4eWZa8L31_0DOu-Wdw</recordid><startdate>20090601</startdate><enddate>20090601</enddate><creator>Hsu, M.J.</creator><creator>Esener, S.C.</creator><creator>Finkelstein, H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20090601</creationdate><title>A CMOS STI-Bound Single-Photon Avalanche Diode With 27-ps Timing Resolution and a Reduced Diffusion Tail</title><author>Hsu, M.J. ; Esener, S.C. ; Finkelstein, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-7f02387c4b68d03edc7ed38b6ca28bc9e759c423d6d1150b6f9b07673c7d230f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Avalanche breakdown</topic><topic>Avalanche diodes</topic><topic>avalanche photodiodes</topic><topic>Charge carriers</topic><topic>CMOS</topic><topic>CMOS technology</topic><topic>cryptography</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Detectors</topic><topic>Devices</topic><topic>Diffusion</topic><topic>Diodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>fluorescence</topic><topic>General equipment and techniques</topic><topic>Guards</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Integrated circuits</topic><topic>Jitter</topic><topic>Optical microscopy</topic><topic>Optoelectronic devices</topic><topic>Physics</topic><topic>Pulse modulation</topic><topic>Pulse position modulation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</topic><topic>silicon radiation detectors</topic><topic>Tail</topic><topic>Time measurement</topic><topic>Time measurements</topic><topic>Timing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsu, M.J.</creatorcontrib><creatorcontrib>Esener, S.C.</creatorcontrib><creatorcontrib>Finkelstein, H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hsu, M.J.</au><au>Esener, S.C.</au><au>Finkelstein, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A CMOS STI-Bound Single-Photon Avalanche Diode With 27-ps Timing Resolution and a Reduced Diffusion Tail</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2009-06-01</date><risdate>2009</risdate><volume>30</volume><issue>6</issue><spage>641</spage><epage>643</epage><pages>641-643</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Single-photon avalanche diodes (SPADs) measure individual photons' time of arrival. Low detector jitter is required in many SPAD applications. This letter describes a method for significantly reducing SPAD jitter using an area-efficient shallow-trench-isolation guard ring. The structure prevents lateral drift and diffusion of charge carriers, resulting in improved timing resolution. Experimental results of the device, fabricated in a 0.18-mum CMOS technology, are presented. The timing resolution of the SPAD is 27-ps full-width at half-maximum. Importantly, the diffusion tail exhibits only 96-ps full-width at hundredth-maximum, a three times improvement over previously published SPAD results. The reduced jitter can be translated to improved bit error rates in quantum key distribution systems, faster bit rates in pulse position modulation optical links, and greater contrast in high-resolution fluorescence lifetime imaging microscopy.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2009.2019974</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2009-06, Vol.30 (6), p.641-643 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_journals_912025961 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Avalanche breakdown Avalanche diodes avalanche photodiodes Charge carriers CMOS CMOS technology cryptography Design. Technologies. Operation analysis. Testing Detectors Devices Diffusion Diodes Electronics Exact sciences and technology fluorescence General equipment and techniques Guards Instruments, apparatus, components and techniques common to several branches of physics and astronomy Integrated circuits Jitter Optical microscopy Optoelectronic devices Physics Pulse modulation Pulse position modulation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing silicon radiation detectors Tail Time measurement Time measurements Timing |
| title | A CMOS STI-Bound Single-Photon Avalanche Diode With 27-ps Timing Resolution and a Reduced Diffusion Tail |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T23%3A01%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20CMOS%20STI-Bound%20Single-Photon%20Avalanche%20Diode%20With%2027-ps%20Timing%20Resolution%20and%20a%20Reduced%20Diffusion%20Tail&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Hsu,%20M.J.&rft.date=2009-06-01&rft.volume=30&rft.issue=6&rft.spage=641&rft.epage=643&rft.pages=641-643&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2009.2019974&rft_dat=%3Cproquest_RIE%3E2543451901%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912025961&rft_id=info:pmid/&rft_ieee_id=4914830&rfr_iscdi=true |