A 1.6-GS/s 12-bit return-to-zero GaAs RF DAC for multiple Nyquist operation
A 12-bit 1.6-GS/s digital-to-analog converter (DAC) implemented with 4-/spl mu/m/sup 2/ GaAs HBT process is presented. Return-to-zero (RZ) current switches are added to current steering DAC for high-frequency wideband applications to achieve 800-MHz bandwidth at first and second Nyquist band without...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2005-12, Vol.40 (12), p.2456-2468 |
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container_title | IEEE journal of solid-state circuits |
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creator | Myung-Jun Choe Kwang-Hyun Baek Teshome, M. |
description | A 12-bit 1.6-GS/s digital-to-analog converter (DAC) implemented with 4-/spl mu/m/sup 2/ GaAs HBT process is presented. Return-to-zero (RZ) current switches are added to current steering DAC for high-frequency wideband applications to achieve 800-MHz bandwidth at first and second Nyquist band without the need for a reverse sinc equalization filter in wideband transmitter application. The RZ circuit also improves spectral purity by screening the switching noise from the analog output during data transition. Measured performance shows two-tone third-order harmonic distortion of -70 dB at 1.5-GHz output frequency, clocked at 1.6 GHz. Reliable interface with CMOS logic IC is guaranteed with the inclusion of a four-clock-deep FIFO circuit. The DAC dissipates 1.2 W at -5 V when sampled with 1.6-GHz clock, with typical output voltage swing of 1.2 V/sub PP/. |
doi_str_mv | 10.1109/JSSC.2005.856276 |
format | Article |
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Return-to-zero (RZ) current switches are added to current steering DAC for high-frequency wideband applications to achieve 800-MHz bandwidth at first and second Nyquist band without the need for a reverse sinc equalization filter in wideband transmitter application. The RZ circuit also improves spectral purity by screening the switching noise from the analog output during data transition. Measured performance shows two-tone third-order harmonic distortion of -70 dB at 1.5-GHz output frequency, clocked at 1.6 GHz. Reliable interface with CMOS logic IC is guaranteed with the inclusion of a four-clock-deep FIFO circuit. The DAC dissipates 1.2 W at -5 V when sampled with 1.6-GHz clock, with typical output voltage swing of 1.2 V/sub PP/.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2005.856276</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bandwidth ; Circuit properties ; Circuits ; Clocks ; CMOS logic circuits ; DAC ; Digital circuits ; Digital-analog conversion ; Electric potential ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Filters ; GaAs ; Gallium arsenide ; Gallium arsenides ; Heterojunction bipolar transistors ; Inclusions ; Logic ; multiple Nyquist ; Noise levels ; Radio frequency ; return-to-zero ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Signal convertors ; Switches ; Switching, multiplexing, switched capacity circuits ; Transistors ; Wideband</subject><ispartof>IEEE journal of solid-state circuits, 2005-12, Vol.40 (12), p.2456-2468</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-c9fb88082b428b2cad821fee0ad5ef53dd1a7845cf82038ea70d5488994ba2d13</citedby><cites>FETCH-LOGICAL-c352t-c9fb88082b428b2cad821fee0ad5ef53dd1a7845cf82038ea70d5488994ba2d13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1546222$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1546222$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17306502$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Myung-Jun Choe</creatorcontrib><creatorcontrib>Kwang-Hyun Baek</creatorcontrib><creatorcontrib>Teshome, M.</creatorcontrib><title>A 1.6-GS/s 12-bit return-to-zero GaAs RF DAC for multiple Nyquist operation</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A 12-bit 1.6-GS/s digital-to-analog converter (DAC) implemented with 4-/spl mu/m/sup 2/ GaAs HBT process is presented. Return-to-zero (RZ) current switches are added to current steering DAC for high-frequency wideband applications to achieve 800-MHz bandwidth at first and second Nyquist band without the need for a reverse sinc equalization filter in wideband transmitter application. The RZ circuit also improves spectral purity by screening the switching noise from the analog output during data transition. Measured performance shows two-tone third-order harmonic distortion of -70 dB at 1.5-GHz output frequency, clocked at 1.6 GHz. Reliable interface with CMOS logic IC is guaranteed with the inclusion of a four-clock-deep FIFO circuit. The DAC dissipates 1.2 W at -5 V when sampled with 1.6-GHz clock, with typical output voltage swing of 1.2 V/sub PP/.</description><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Clocks</subject><subject>CMOS logic circuits</subject><subject>DAC</subject><subject>Digital circuits</subject><subject>Digital-analog conversion</subject><subject>Electric potential</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Filters</subject><subject>GaAs</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Heterojunction bipolar transistors</subject><subject>Inclusions</subject><subject>Logic</subject><subject>multiple Nyquist</subject><subject>Noise levels</subject><subject>Radio frequency</subject><subject>return-to-zero</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Signal convertors</subject><subject>Switches</subject><subject>Switching, multiplexing, switched capacity circuits</subject><subject>Transistors</subject><subject>Wideband</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkM1Lw0AQxRdRsFbvgpdFEE_b7kx2k82xVFs_ioJV8LZskg2kpNm6mxzqX29KCwVPw_B-7zHzCLkGPgLg6fhluZyOkHM5UjLGJD4hA5BSMUii71My4BwUS3v9nFyEsOpXIRQMyOuEwihm8-U4UECWVS31tu18w1rHfq13dG4mgX7M6MNkSkvn6bqr22pTW_q2_emq0FK3sd60lWsuyVlp6mCvDnNIvmaPn9MntnifP08nC5ZHEluWp2WmFFeYCVQZ5qZQCKW13BTSljIqCjCJEjIvFfJIWZPwQgql0lRkBguIhuR-n7vx7qezodXrKuS2rk1jXRe0SmNQArjsydt_5Mr1v_XH6RSQAwKKHuJ7KPcuBG9LvfHV2vitBq533epdt3rXrd5321vuDrkm5KYuvWnyKhx9ScRjybHnbvZcZa09ylLEiBj9Ae45fsI</recordid><startdate>20051201</startdate><enddate>20051201</enddate><creator>Myung-Jun Choe</creator><creator>Kwang-Hyun Baek</creator><creator>Teshome, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>KR7</scope></search><sort><creationdate>20051201</creationdate><title>A 1.6-GS/s 12-bit return-to-zero GaAs RF DAC for multiple Nyquist operation</title><author>Myung-Jun Choe ; Kwang-Hyun Baek ; Teshome, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-c9fb88082b428b2cad821fee0ad5ef53dd1a7845cf82038ea70d5488994ba2d13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>Circuit properties</topic><topic>Circuits</topic><topic>Clocks</topic><topic>CMOS logic circuits</topic><topic>DAC</topic><topic>Digital circuits</topic><topic>Digital-analog conversion</topic><topic>Electric potential</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Filters</topic><topic>GaAs</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Heterojunction bipolar transistors</topic><topic>Inclusions</topic><topic>Logic</topic><topic>multiple Nyquist</topic><topic>Noise levels</topic><topic>Radio frequency</topic><topic>return-to-zero</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Signal convertors</topic><topic>Switches</topic><topic>Switching, multiplexing, switched capacity circuits</topic><topic>Transistors</topic><topic>Wideband</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Myung-Jun Choe</creatorcontrib><creatorcontrib>Kwang-Hyun Baek</creatorcontrib><creatorcontrib>Teshome, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Civil Engineering Abstracts</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Myung-Jun Choe</au><au>Kwang-Hyun Baek</au><au>Teshome, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 1.6-GS/s 12-bit return-to-zero GaAs RF DAC for multiple Nyquist operation</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2005-12-01</date><risdate>2005</risdate><volume>40</volume><issue>12</issue><spage>2456</spage><epage>2468</epage><pages>2456-2468</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A 12-bit 1.6-GS/s digital-to-analog converter (DAC) implemented with 4-/spl mu/m/sup 2/ GaAs HBT process is presented. Return-to-zero (RZ) current switches are added to current steering DAC for high-frequency wideband applications to achieve 800-MHz bandwidth at first and second Nyquist band without the need for a reverse sinc equalization filter in wideband transmitter application. The RZ circuit also improves spectral purity by screening the switching noise from the analog output during data transition. Measured performance shows two-tone third-order harmonic distortion of -70 dB at 1.5-GHz output frequency, clocked at 1.6 GHz. Reliable interface with CMOS logic IC is guaranteed with the inclusion of a four-clock-deep FIFO circuit. The DAC dissipates 1.2 W at -5 V when sampled with 1.6-GHz clock, with typical output voltage swing of 1.2 V/sub PP/.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2005.856276</doi><tpages>13</tpages></addata></record> |
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subjects | Applied sciences Bandwidth Circuit properties Circuits Clocks CMOS logic circuits DAC Digital circuits Digital-analog conversion Electric potential Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Filters GaAs Gallium arsenide Gallium arsenides Heterojunction bipolar transistors Inclusions Logic multiple Nyquist Noise levels Radio frequency return-to-zero Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors Switches Switching, multiplexing, switched capacity circuits Transistors Wideband |
title | A 1.6-GS/s 12-bit return-to-zero GaAs RF DAC for multiple Nyquist operation |
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