Carrier Dynamics Investigation on Passivation Dielectric Constant and RF Performance of Millimeter-Wave Power GaN HEMTs

The effect of the passivation layer dielectric constant and T-gate geometry on the performance of millimeter-wave high-power GaN HEMTs is investigated through a nanoscale carrier dynamics description obtained by full-band cellular Monte Carlo simulation. The effective gate length is found to be incr...

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Veröffentlicht in:	IEEE transactions on electron devices 2011-11, Vol.58 (11), p.3876-3884
Hauptverfasser:	Guerra, D., Saraniti, M., Ferry, D. K., Goodnick, S. M., Marino, F. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Carriers Computer simulation Devices Dielectric constant Dynamics effective gate length Electronics Exact sciences and technology Gallium nitride GaN high frequency highelectron mobility transistors (HEMT) Logic gates Monte Carlo Monte Carlo methods Nanostructure numerical simulation Passivation phonons Scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon compounds Transistors
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