An effective single-trap-level model for the proton-induced semi-insulating substrates

To suppress the undesirable substrate couplings, a novel approach, called the /spl pi/ technology (particle-enhanced isolation), was previously proposed, in which energetic proton beams were applied on the already-manufactured mixed-mode IC wafers prior to their packaging . The results of an improve...

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Veröffentlicht in:IEEE transactions on electron devices 2006-01, Vol.53 (1), p.83-88
Hauptverfasser: Liao, Chungpin, Hsu, Jeng-Shin
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description To suppress the undesirable substrate couplings, a novel approach, called the /spl pi/ technology (particle-enhanced isolation), was previously proposed, in which energetic proton beams were applied on the already-manufactured mixed-mode IC wafers prior to their packaging . The results of an improvement of 25-30 dB in coupling reduction and a two-to-three folds enhancement in inductor Q values were also demonstrated. The continuing improvement of this /spl pi/ technology has shed light on the concept of a new very large-scale integration backend solution: the particle-beam stand, a brute-force that may ultimately bring general system-on-a-chip manufacturing to a common platform. However, up to this day the physics describing properties of such proton-caused defect phase has never emerged. In this paper, the possible establishment of an effective, self-consistent, single level defect model is attempted. It will be carried out by fitting the existing single-trap-level theory with experimentally obtained parameters and the data from numerical simulations using the the stopping and range of ions in matter code (a charged-particle stopping-power calculation program). It will be revealed that, more than mere simple traps of charge carriers, those proton-created defects were also intrinsically charged (carrying +e or -e) and thus all were participating in the Rutherford-like scattering of the remaining free charge carriers which had survived the defect trapping. The calculated effective single trap level (E/sub T/) is about +0.24 eV in n-Si and -0.34 eV in p-Si, measuring from the center of the energy bandgap.
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_889806748</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1561550</ieee_id><sourcerecordid>2453597911</sourcerecordid><originalsourceid>FETCH-LOGICAL-c335t-de896c1466a0b3704bb977e7d8f6f6828dd7bc1a51416fd6b732a70e962ea2013</originalsourceid><addsrcrecordid>eNp9kc1Lw0AQxRdRsFbPHrwEQT2l3Y9kdnMstX5AwUv1GjabWU1Jk7qbFPzv3dBCwYOXGYb5vccMj5BrRieM0Wy6WjxOOKXpRAEFkZ6QEUtTGWeQwCkZUcpUnAklzsmF9-swQpLwEfmYNRFai6ardhj5qvmsMe6c3sY17rCONm0Zqm1d1H1htHVt1zZx1ZS9wTLyuKnC4Ptad0EZ-b7wQduhvyRnVtcerw59TN6fFqv5S7x8e36dz5axESLt4hJVBoYlAJoWQtKkKDIpUZbKggXFVVnKwjCdsoSBLaGQgmtJMQOOmlMmxuRh7xsu--7Rd_mm8gbrWjfY9j5XKvwMjPJA3v9LckXThAME8PYPuG5714QvBjdFQSYqQNM9ZFzrvUObb1210e4nZzQf4shDHPkQR76PIyjuDrbaG11bpxtT-aNMimDOhjtv9lyFiMd1CiFNKn4BwCCSjg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>889806748</pqid></control><display><type>article</type><title>An effective single-trap-level model for the proton-induced semi-insulating substrates</title><source>IEEE Electronic Library (IEL)</source><creator>Liao, Chungpin ; Hsu, Jeng-Shin</creator><creatorcontrib>Liao, Chungpin ; Hsu, Jeng-Shin</creatorcontrib><description>To suppress the undesirable substrate couplings, a novel approach, called the /spl pi/ technology (particle-enhanced isolation), was previously proposed, in which energetic proton beams were applied on the already-manufactured mixed-mode IC wafers prior to their packaging . The results of an improvement of 25-30 dB in coupling reduction and a two-to-three folds enhancement in inductor Q values were also demonstrated. The continuing improvement of this /spl pi/ technology has shed light on the concept of a new very large-scale integration backend solution: the particle-beam stand, a brute-force that may ultimately bring general system-on-a-chip manufacturing to a common platform. However, up to this day the physics describing properties of such proton-caused defect phase has never emerged. In this paper, the possible establishment of an effective, self-consistent, single level defect model is attempted. It will be carried out by fitting the existing single-trap-level theory with experimentally obtained parameters and the data from numerical simulations using the the stopping and range of ions in matter code (a charged-particle stopping-power calculation program). It will be revealed that, more than mere simple traps of charge carriers, those proton-created defects were also intrinsically charged (carrying +e or -e) and thus all were participating in the Rutherford-like scattering of the remaining free charge carriers which had survived the defect trapping. The calculated effective single trap level (E/sub T/) is about +0.24 eV in n-Si and -0.34 eV in p-Si, measuring from the center of the energy bandgap.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2005.860635</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Charge carriers ; Charge trap ; Defects ; Design. Technologies. Operation analysis. Testing ; Devices ; Electronics ; Exact sciences and technology ; Fittings ; high ; Inductors ; Integrated circuit manufacture ; Integrated circuit modeling ; Integrated circuits ; Isolation technology ; Magnetic devices ; Mathematical models ; Mixed analog-digital integrated circuits ; mixed-mode ; Particle scattering ; semi-insulating silicon ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Sheds ; system-on-a-chip (SOC) ; Trapping ; Very-large-scale integration</subject><ispartof>IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.83-88</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c335t-de896c1466a0b3704bb977e7d8f6f6828dd7bc1a51416fd6b732a70e962ea2013</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1561550$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,4024,27923,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1561550$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=17389812$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Liao, Chungpin</creatorcontrib><creatorcontrib>Hsu, Jeng-Shin</creatorcontrib><title>An effective single-trap-level model for the proton-induced semi-insulating substrates</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>To suppress the undesirable substrate couplings, a novel approach, called the /spl pi/ technology (particle-enhanced isolation), was previously proposed, in which energetic proton beams were applied on the already-manufactured mixed-mode IC wafers prior to their packaging . The results of an improvement of 25-30 dB in coupling reduction and a two-to-three folds enhancement in inductor Q values were also demonstrated. The continuing improvement of this /spl pi/ technology has shed light on the concept of a new very large-scale integration backend solution: the particle-beam stand, a brute-force that may ultimately bring general system-on-a-chip manufacturing to a common platform. However, up to this day the physics describing properties of such proton-caused defect phase has never emerged. In this paper, the possible establishment of an effective, self-consistent, single level defect model is attempted. It will be carried out by fitting the existing single-trap-level theory with experimentally obtained parameters and the data from numerical simulations using the the stopping and range of ions in matter code (a charged-particle stopping-power calculation program). It will be revealed that, more than mere simple traps of charge carriers, those proton-created defects were also intrinsically charged (carrying +e or -e) and thus all were participating in the Rutherford-like scattering of the remaining free charge carriers which had survived the defect trapping. The calculated effective single trap level (E/sub T/) is about +0.24 eV in n-Si and -0.34 eV in p-Si, measuring from the center of the energy bandgap.</description><subject>Applied sciences</subject><subject>Charge carriers</subject><subject>Charge trap</subject><subject>Defects</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fittings</subject><subject>high</subject><subject>Inductors</subject><subject>Integrated circuit manufacture</subject><subject>Integrated circuit modeling</subject><subject>Integrated circuits</subject><subject>Isolation technology</subject><subject>Magnetic devices</subject><subject>Mathematical models</subject><subject>Mixed analog-digital integrated circuits</subject><subject>mixed-mode</subject><subject>Particle scattering</subject><subject>semi-insulating silicon</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sheds</subject><subject>system-on-a-chip (SOC)</subject><subject>Trapping</subject><subject>Very-large-scale integration</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1Lw0AQxRdRsFbPHrwEQT2l3Y9kdnMstX5AwUv1GjabWU1Jk7qbFPzv3dBCwYOXGYb5vccMj5BrRieM0Wy6WjxOOKXpRAEFkZ6QEUtTGWeQwCkZUcpUnAklzsmF9-swQpLwEfmYNRFai6ardhj5qvmsMe6c3sY17rCONm0Zqm1d1H1htHVt1zZx1ZS9wTLyuKnC4Ptad0EZ-b7wQduhvyRnVtcerw59TN6fFqv5S7x8e36dz5axESLt4hJVBoYlAJoWQtKkKDIpUZbKggXFVVnKwjCdsoSBLaGQgmtJMQOOmlMmxuRh7xsu--7Rd_mm8gbrWjfY9j5XKvwMjPJA3v9LckXThAME8PYPuG5714QvBjdFQSYqQNM9ZFzrvUObb1210e4nZzQf4shDHPkQR76PIyjuDrbaG11bpxtT-aNMimDOhjtv9lyFiMd1CiFNKn4BwCCSjg</recordid><startdate>200601</startdate><enddate>200601</enddate><creator>Liao, Chungpin</creator><creator>Hsu, Jeng-Shin</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>200601</creationdate><title>An effective single-trap-level model for the proton-induced semi-insulating substrates</title><author>Liao, Chungpin ; Hsu, Jeng-Shin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c335t-de896c1466a0b3704bb977e7d8f6f6828dd7bc1a51416fd6b732a70e962ea2013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Applied sciences</topic><topic>Charge carriers</topic><topic>Charge trap</topic><topic>Defects</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fittings</topic><topic>high</topic><topic>Inductors</topic><topic>Integrated circuit manufacture</topic><topic>Integrated circuit modeling</topic><topic>Integrated circuits</topic><topic>Isolation technology</topic><topic>Magnetic devices</topic><topic>Mathematical models</topic><topic>Mixed analog-digital integrated circuits</topic><topic>mixed-mode</topic><topic>Particle scattering</topic><topic>semi-insulating silicon</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sheds</topic><topic>system-on-a-chip (SOC)</topic><topic>Trapping</topic><topic>Very-large-scale integration</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liao, Chungpin</creatorcontrib><creatorcontrib>Hsu, Jeng-Shin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Liao, Chungpin</au><au>Hsu, Jeng-Shin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An effective single-trap-level model for the proton-induced semi-insulating substrates</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2006-01</date><risdate>2006</risdate><volume>53</volume><issue>1</issue><spage>83</spage><epage>88</epage><pages>83-88</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>To suppress the undesirable substrate couplings, a novel approach, called the /spl pi/ technology (particle-enhanced isolation), was previously proposed, in which energetic proton beams were applied on the already-manufactured mixed-mode IC wafers prior to their packaging . The results of an improvement of 25-30 dB in coupling reduction and a two-to-three folds enhancement in inductor Q values were also demonstrated. The continuing improvement of this /spl pi/ technology has shed light on the concept of a new very large-scale integration backend solution: the particle-beam stand, a brute-force that may ultimately bring general system-on-a-chip manufacturing to a common platform. However, up to this day the physics describing properties of such proton-caused defect phase has never emerged. In this paper, the possible establishment of an effective, self-consistent, single level defect model is attempted. It will be carried out by fitting the existing single-trap-level theory with experimentally obtained parameters and the data from numerical simulations using the the stopping and range of ions in matter code (a charged-particle stopping-power calculation program). It will be revealed that, more than mere simple traps of charge carriers, those proton-created defects were also intrinsically charged (carrying +e or -e) and thus all were participating in the Rutherford-like scattering of the remaining free charge carriers which had survived the defect trapping. The calculated effective single trap level (E/sub T/) is about +0.24 eV in n-Si and -0.34 eV in p-Si, measuring from the center of the energy bandgap.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2005.860635</doi><tpages>6</tpages></addata></record>
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subjects Applied sciences
Charge carriers
Charge trap
Defects
Design. Technologies. Operation analysis. Testing
Devices
Electronics
Exact sciences and technology
Fittings
high
Inductors
Integrated circuit manufacture
Integrated circuit modeling
Integrated circuits
Isolation technology
Magnetic devices
Mathematical models
Mixed analog-digital integrated circuits
mixed-mode
Particle scattering
semi-insulating silicon
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sheds
system-on-a-chip (SOC)
Trapping
Very-large-scale integration
title An effective single-trap-level model for the proton-induced semi-insulating substrates
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T04%3A54%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=An%20effective%20single-trap-level%20model%20for%20the%20proton-induced%20semi-insulating%20substrates&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Liao,%20Chungpin&rft.date=2006-01&rft.volume=53&rft.issue=1&rft.spage=83&rft.epage=88&rft.pages=83-88&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2005.860635&rft_dat=%3Cproquest_RIE%3E2453597911%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=889806748&rft_id=info:pmid/&rft_ieee_id=1561550&rfr_iscdi=true