New approach for defining the threshold voltage of MOSFETs

The threshold voltage of MOSFETs has traditionally been defined as the gate voltage required to cause the surface potential to be equal to twice the Fermi potential in the bulk of semiconductor. Such a definition, although widely used for modeling long-channel MOSFET's, becomes increasingly que...

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Veröffentlicht in:	IEEE transactions on electron devices 2001-04, Vol.48 (4), p.809-813
Hauptverfasser:	Salcedo, J.A., Ortiz-Conde, A., Sanchez, E.J.G., Muci, J., Liou, J.J., Yue, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Devices Electric potential MOSFETs Oxides Semiconductors Threshold voltage Voltage
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