A planar Bi-Sb multijunction thermal converter with small ac-dc transfer differences
A planar Bi-Sb multijunction thermal converter was fabricated on the LPCVD Si/sub 3/N/sub 4//SiO/sub 2//Si/sub 3/N/sub 4/-diaphragm, prepared by silicon bulk micromachining, which thermally isolated a bifilar Pt- or NiCr-heater and the hot junctions of a Bi-Sb thermopile from the silicon substrate....
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| Veröffentlicht in: | IEEE transactions on instrumentation and measurement 2002-02, Vol.51 (1), p.115-119 |
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| container_title | IEEE transactions on instrumentation and measurement |
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| creator | Kim, Jin-Sup Lee, Hyun-Cheol Lee, Jong-Hyun Lee, Jung-Hee Park, Se Il Kwon, Sung-Won |
| description | A planar Bi-Sb multijunction thermal converter was fabricated on the LPCVD Si/sub 3/N/sub 4//SiO/sub 2//Si/sub 3/N/sub 4/-diaphragm, prepared by silicon bulk micromachining, which thermally isolated a bifilar Pt- or NiCr-heater and the hot junctions of a Bi-Sb thermopile from the silicon substrate. The voltage responsivity, the ac-dc transfer difference, and the fluctuations of the output thermoelectric voltage and heater resistance were discussed to investigate the design factors of a thermal converter. The respective voltage responsivities in air and in a vacuum of the thermal converter with a built-in NiCr-heater were about 14.0 mV/mW and 54.0 mV/mW. The ac-dc voltage and the current transfer differences in air were about /spl plusmn/0.60 ppm and /spl plusmn/0.11 ppm in the dc reversing frequency range from 10 Hz to 10 kHz. They are sufficiently small to be used as practical ac standards. Compared to the thermal converter with a built-in Pt-heater, the thermal converter with a built-in NiCr-heater demonstrated a higher voltage responsivity and smaller ac-dc transfer differences, while exhibiting slightly larger fluctuations in output thermoelectric voltage and in heater resistance. |
| doi_str_mv | 10.1109/19.989913 |
| format | Article |
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The voltage responsivity, the ac-dc transfer difference, and the fluctuations of the output thermoelectric voltage and heater resistance were discussed to investigate the design factors of a thermal converter. The respective voltage responsivities in air and in a vacuum of the thermal converter with a built-in NiCr-heater were about 14.0 mV/mW and 54.0 mV/mW. The ac-dc voltage and the current transfer differences in air were about /spl plusmn/0.60 ppm and /spl plusmn/0.11 ppm in the dc reversing frequency range from 10 Hz to 10 kHz. They are sufficiently small to be used as practical ac standards. Compared to the thermal converter with a built-in Pt-heater, the thermal converter with a built-in NiCr-heater demonstrated a higher voltage responsivity and smaller ac-dc transfer differences, while exhibiting slightly larger fluctuations in output thermoelectric voltage and in heater resistance.</description><identifier>ISSN: 0018-9456</identifier><identifier>EISSN: 1557-9662</identifier><identifier>DOI: 10.1109/19.989913</identifier><identifier>CODEN: IEIMAO</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Analog-digital conversion ; Converters ; Electric potential ; Fluctuations ; Heat transfer ; Heaters ; Heating equipment ; Micromachining ; Resistance heating ; Silicon ; Silicon substrates ; Thermal factors ; Thermal resistance ; Thermoelectricity ; Voltage</subject><ispartof>IEEE transactions on instrumentation and measurement, 2002-02, Vol.51 (1), p.115-119</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-d2cc6a590b26681cc05a98fa39c86c22ecf14e29479f7936cb7a87ab60da11e53</citedby><cites>FETCH-LOGICAL-c367t-d2cc6a590b26681cc05a98fa39c86c22ecf14e29479f7936cb7a87ab60da11e53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/989913$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/989913$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Jin-Sup</creatorcontrib><creatorcontrib>Lee, Hyun-Cheol</creatorcontrib><creatorcontrib>Lee, Jong-Hyun</creatorcontrib><creatorcontrib>Lee, Jung-Hee</creatorcontrib><creatorcontrib>Park, Se Il</creatorcontrib><creatorcontrib>Kwon, Sung-Won</creatorcontrib><title>A planar Bi-Sb multijunction thermal converter with small ac-dc transfer differences</title><title>IEEE transactions on instrumentation and measurement</title><addtitle>TIM</addtitle><description>A planar Bi-Sb multijunction thermal converter was fabricated on the LPCVD Si/sub 3/N/sub 4//SiO/sub 2//Si/sub 3/N/sub 4/-diaphragm, prepared by silicon bulk micromachining, which thermally isolated a bifilar Pt- or NiCr-heater and the hot junctions of a Bi-Sb thermopile from the silicon substrate. The voltage responsivity, the ac-dc transfer difference, and the fluctuations of the output thermoelectric voltage and heater resistance were discussed to investigate the design factors of a thermal converter. The respective voltage responsivities in air and in a vacuum of the thermal converter with a built-in NiCr-heater were about 14.0 mV/mW and 54.0 mV/mW. The ac-dc voltage and the current transfer differences in air were about /spl plusmn/0.60 ppm and /spl plusmn/0.11 ppm in the dc reversing frequency range from 10 Hz to 10 kHz. They are sufficiently small to be used as practical ac standards. Compared to the thermal converter with a built-in Pt-heater, the thermal converter with a built-in NiCr-heater demonstrated a higher voltage responsivity and smaller ac-dc transfer differences, while exhibiting slightly larger fluctuations in output thermoelectric voltage and in heater resistance.</description><subject>Analog-digital conversion</subject><subject>Converters</subject><subject>Electric potential</subject><subject>Fluctuations</subject><subject>Heat transfer</subject><subject>Heaters</subject><subject>Heating equipment</subject><subject>Micromachining</subject><subject>Resistance heating</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Thermal factors</subject><subject>Thermal resistance</subject><subject>Thermoelectricity</subject><subject>Voltage</subject><issn>0018-9456</issn><issn>1557-9662</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0UtLAzEQB_AgCtbqwaun4EHxsDXZbB5zrMUXFDxYz0s2m6Vb9lGTrOK3N2WLBw_iaWDmNwPDH6FzSmaUErilMAMFQNkBmlDOZQJCpIdoQghVCWRcHKMT7zeEECkyOUGrOd42utMO39XJa4HboQn1ZuhMqPsOh7V1rW6w6bsP64J1-LMOa-xjr8HaJKXBwenOV3FS1lUstjPWn6KjSjfenu3rFL093K8WT8ny5fF5MV8mhgkZkjI1RmgOpEiFUNQYwjWoSjMwSpg0taaimU0hk1BJYMIUUiupC0FKTanlbIqux7tb178P1oe8rb2xTXzI9oPPgcQ14LCTV3_KVEkls4z9A3LKeEojvPwFN_3guvhurlTGGWFAIroZkXG9985W-dbVrXZfOSX5Lq-cQj7mFe3FaGtr7Y_bD78BShaPDg</recordid><startdate>20020201</startdate><enddate>20020201</enddate><creator>Kim, Jin-Sup</creator><creator>Lee, Hyun-Cheol</creator><creator>Lee, Jong-Hyun</creator><creator>Lee, Jung-Hee</creator><creator>Park, Se Il</creator><creator>Kwon, Sung-Won</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>8BQ</scope><scope>JG9</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20020201</creationdate><title>A planar Bi-Sb multijunction thermal converter with small ac-dc transfer differences</title><author>Kim, Jin-Sup ; Lee, Hyun-Cheol ; Lee, Jong-Hyun ; Lee, Jung-Hee ; Park, Se Il ; Kwon, Sung-Won</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-d2cc6a590b26681cc05a98fa39c86c22ecf14e29479f7936cb7a87ab60da11e53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Analog-digital conversion</topic><topic>Converters</topic><topic>Electric potential</topic><topic>Fluctuations</topic><topic>Heat transfer</topic><topic>Heaters</topic><topic>Heating equipment</topic><topic>Micromachining</topic><topic>Resistance heating</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Thermal factors</topic><topic>Thermal resistance</topic><topic>Thermoelectricity</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Jin-Sup</creatorcontrib><creatorcontrib>Lee, Hyun-Cheol</creatorcontrib><creatorcontrib>Lee, Jong-Hyun</creatorcontrib><creatorcontrib>Lee, Jung-Hee</creatorcontrib><creatorcontrib>Park, Se Il</creatorcontrib><creatorcontrib>Kwon, Sung-Won</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on instrumentation and measurement</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Jin-Sup</au><au>Lee, Hyun-Cheol</au><au>Lee, Jong-Hyun</au><au>Lee, Jung-Hee</au><au>Park, Se Il</au><au>Kwon, Sung-Won</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A planar Bi-Sb multijunction thermal converter with small ac-dc transfer differences</atitle><jtitle>IEEE transactions on instrumentation and measurement</jtitle><stitle>TIM</stitle><date>2002-02-01</date><risdate>2002</risdate><volume>51</volume><issue>1</issue><spage>115</spage><epage>119</epage><pages>115-119</pages><issn>0018-9456</issn><eissn>1557-9662</eissn><coden>IEIMAO</coden><abstract>A planar Bi-Sb multijunction thermal converter was fabricated on the LPCVD Si/sub 3/N/sub 4//SiO/sub 2//Si/sub 3/N/sub 4/-diaphragm, prepared by silicon bulk micromachining, which thermally isolated a bifilar Pt- or NiCr-heater and the hot junctions of a Bi-Sb thermopile from the silicon substrate. The voltage responsivity, the ac-dc transfer difference, and the fluctuations of the output thermoelectric voltage and heater resistance were discussed to investigate the design factors of a thermal converter. The respective voltage responsivities in air and in a vacuum of the thermal converter with a built-in NiCr-heater were about 14.0 mV/mW and 54.0 mV/mW. The ac-dc voltage and the current transfer differences in air were about /spl plusmn/0.60 ppm and /spl plusmn/0.11 ppm in the dc reversing frequency range from 10 Hz to 10 kHz. They are sufficiently small to be used as practical ac standards. Compared to the thermal converter with a built-in Pt-heater, the thermal converter with a built-in NiCr-heater demonstrated a higher voltage responsivity and smaller ac-dc transfer differences, while exhibiting slightly larger fluctuations in output thermoelectric voltage and in heater resistance.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/19.989913</doi><tpages>5</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Analog-digital conversion Converters Electric potential Fluctuations Heat transfer Heaters Heating equipment Micromachining Resistance heating Silicon Silicon substrates Thermal factors Thermal resistance Thermoelectricity Voltage |
| title | A planar Bi-Sb multijunction thermal converter with small ac-dc transfer differences |
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