Multiple-gate SOI MOSFETs: device design guidelines

This paper describes computer simulations of various SOI MOSFETs with double and triple-gate structures, as well as gate-all-around devices. The concept of a triple-gate device with sidewalls extending into the buried oxide (hereby called a "/spl Pi/-gate" or "Pi-gate" MOSFET) is...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2002-12, Vol.49 (12), p.2222-2229
Hauptverfasser:	Jong-Tae Park, Colinge, J.-P.
Format:	Artikel
Sprache:	eng
Schlagworte:	MOSFETs Semiconductor device modeling Silicon on insulator technology
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!