Oxide roughness effect on tunneling current of MOS diodes

Two-dimensional (2-D) device simulation is used to investigate the tunneling current of metal ultra-thin-oxide silicon tunneling diodes with different oxide roughness. With the conformal nature of ultrathin oxide, the tunneling current density is simulated in both direct tunneling and Fowler-Nordhei...

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Veröffentlicht in:	IEEE transactions on electron devices 2002-12, Vol.49 (12), p.2204-2208
Hauptverfasser:	Hsu, B.-C., Chen, K.-F., Lai, C.-C., Lee, S.W., Liu, C.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	MIS devices Semiconductor device modeling Tunnel diodes
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