3-D Thermal-ADI: a linear-time chip level transient thermal simulator
Recent study shows that the nonuniform thermal distribution not only has an impact on the substrate but also interconnects. Hence, three-dimensional (3-D) thermal analysis is crucial to analyze these effects. In this paper, the authors present and develop an efficient 3-D transient thermal simulator...
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Veröffentlicht in: | IEEE transactions on computer-aided design of integrated circuits and systems 2002-12, Vol.21 (12), p.1434-1445 |
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creator | Wang, Ting-Yuan Chen, Charlie Chung-Ping |
description | Recent study shows that the nonuniform thermal distribution not only has an impact on the substrate but also interconnects. Hence, three-dimensional (3-D) thermal analysis is crucial to analyze these effects. In this paper, the authors present and develop an efficient 3-D transient thermal simulator based on the alternating direction implicit (ADI) method for temperature estimation in a 3-D environment. Their simulator, 3D Thermal-ADI, not only has a linear runtime and memory requirement, but also is unconditionally stable. Detailed analysis of the 3-D nonhomogeneous cases and boundary conditions for on-chip VLSI applications are introduced and presented. Extensive experimental results show that our algorithm is not only orders of magnitude faster than the traditional thermal simulation algorithms but also highly accurate and memory efficient. The temperature profile of steady state can also be reached in several iterations. This software will be released via the web for public usage. |
doi_str_mv | 10.1109/TCAD.2002.804385 |
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fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_884486364</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1097863</ieee_id><sourcerecordid>907991046</sourcerecordid><originalsourceid>FETCH-LOGICAL-c386t-42dda5bcc7fba52fa64561afee33fa09d176df99786f7acb71925ae1729184d13</originalsourceid><addsrcrecordid>eNpdkMFLwzAchYMoOKd3wUvw4ikzadIm8Ta2qYOBl3kOWfsLi6TtTFrB_96WehBP7_K9x-ND6JbRBWNUP-5Xy_UiozRbKCq4ys_QjGkuiWA5O0czmklFKJX0El2l9EEpE3mmZ2jDyRrvjxBrG8hyvX3CFgffgI2k8zXg8uhPOMAXBNxF2yQPTYe7icfJ132wXRuv0YWzIcHNb87R-_Nmv3olu7eX7Wq5IyVXRUdEVlU2P5SldAebZ84WIi-YdQCcO0t1xWRROa2lKpy05UEyneUWmMw0U6JifI4ept1TbD97SJ2pfSohBNtA2yejqdSaUVEM5P0_8qPtYzOcM0oJoQpeiAGiE1TGNqUIzpyir238Noya0aoZrZrRqpmsDpW7qeIB4A8-fub8B9y4caw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>884486364</pqid></control><display><type>article</type><title>3-D Thermal-ADI: a linear-time chip level transient thermal simulator</title><source>IEEE Xplore (Online service)</source><creator>Wang, Ting-Yuan ; Chen, Charlie Chung-Ping</creator><creatorcontrib>Wang, Ting-Yuan ; Chen, Charlie Chung-Ping</creatorcontrib><description>Recent study shows that the nonuniform thermal distribution not only has an impact on the substrate but also interconnects. Hence, three-dimensional (3-D) thermal analysis is crucial to analyze these effects. In this paper, the authors present and develop an efficient 3-D transient thermal simulator based on the alternating direction implicit (ADI) method for temperature estimation in a 3-D environment. Their simulator, 3D Thermal-ADI, not only has a linear runtime and memory requirement, but also is unconditionally stable. Detailed analysis of the 3-D nonhomogeneous cases and boundary conditions for on-chip VLSI applications are introduced and presented. Extensive experimental results show that our algorithm is not only orders of magnitude faster than the traditional thermal simulation algorithms but also highly accurate and memory efficient. The temperature profile of steady state can also be reached in several iterations. This software will be released via the web for public usage.</description><identifier>ISSN: 0278-0070</identifier><identifier>EISSN: 1937-4151</identifier><identifier>DOI: 10.1109/TCAD.2002.804385</identifier><identifier>CODEN: ITCSDI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Algorithms ; Computer programs ; Dielectric substrates ; Energy consumption ; Finite difference methods ; Heating ; Integrated circuits ; Nodular iron ; Nonuniform ; Runtime ; Silicon ; Temperature distribution ; Thermal factors ; Thermal management ; Thermal simulation ; Thermal simulators ; Three dimensional ; Very large scale integration</subject><ispartof>IEEE transactions on computer-aided design of integrated circuits and systems, 2002-12, Vol.21 (12), p.1434-1445</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c386t-42dda5bcc7fba52fa64561afee33fa09d176df99786f7acb71925ae1729184d13</citedby><cites>FETCH-LOGICAL-c386t-42dda5bcc7fba52fa64561afee33fa09d176df99786f7acb71925ae1729184d13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1097863$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1097863$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wang, Ting-Yuan</creatorcontrib><creatorcontrib>Chen, Charlie Chung-Ping</creatorcontrib><title>3-D Thermal-ADI: a linear-time chip level transient thermal simulator</title><title>IEEE transactions on computer-aided design of integrated circuits and systems</title><addtitle>TCAD</addtitle><description>Recent study shows that the nonuniform thermal distribution not only has an impact on the substrate but also interconnects. Hence, three-dimensional (3-D) thermal analysis is crucial to analyze these effects. In this paper, the authors present and develop an efficient 3-D transient thermal simulator based on the alternating direction implicit (ADI) method for temperature estimation in a 3-D environment. Their simulator, 3D Thermal-ADI, not only has a linear runtime and memory requirement, but also is unconditionally stable. Detailed analysis of the 3-D nonhomogeneous cases and boundary conditions for on-chip VLSI applications are introduced and presented. Extensive experimental results show that our algorithm is not only orders of magnitude faster than the traditional thermal simulation algorithms but also highly accurate and memory efficient. The temperature profile of steady state can also be reached in several iterations. This software will be released via the web for public usage.</description><subject>Algorithms</subject><subject>Computer programs</subject><subject>Dielectric substrates</subject><subject>Energy consumption</subject><subject>Finite difference methods</subject><subject>Heating</subject><subject>Integrated circuits</subject><subject>Nodular iron</subject><subject>Nonuniform</subject><subject>Runtime</subject><subject>Silicon</subject><subject>Temperature distribution</subject><subject>Thermal factors</subject><subject>Thermal management</subject><subject>Thermal simulation</subject><subject>Thermal simulators</subject><subject>Three dimensional</subject><subject>Very large scale integration</subject><issn>0278-0070</issn><issn>1937-4151</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkMFLwzAchYMoOKd3wUvw4ikzadIm8Ta2qYOBl3kOWfsLi6TtTFrB_96WehBP7_K9x-ND6JbRBWNUP-5Xy_UiozRbKCq4ys_QjGkuiWA5O0czmklFKJX0El2l9EEpE3mmZ2jDyRrvjxBrG8hyvX3CFgffgI2k8zXg8uhPOMAXBNxF2yQPTYe7icfJ132wXRuv0YWzIcHNb87R-_Nmv3olu7eX7Wq5IyVXRUdEVlU2P5SldAebZ84WIi-YdQCcO0t1xWRROa2lKpy05UEyneUWmMw0U6JifI4ept1TbD97SJ2pfSohBNtA2yejqdSaUVEM5P0_8qPtYzOcM0oJoQpeiAGiE1TGNqUIzpyir238Noya0aoZrZrRqpmsDpW7qeIB4A8-fub8B9y4caw</recordid><startdate>20021201</startdate><enddate>20021201</enddate><creator>Wang, Ting-Yuan</creator><creator>Chen, Charlie Chung-Ping</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20021201</creationdate><title>3-D Thermal-ADI: a linear-time chip level transient thermal simulator</title><author>Wang, Ting-Yuan ; Chen, Charlie Chung-Ping</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c386t-42dda5bcc7fba52fa64561afee33fa09d176df99786f7acb71925ae1729184d13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Algorithms</topic><topic>Computer programs</topic><topic>Dielectric substrates</topic><topic>Energy consumption</topic><topic>Finite difference methods</topic><topic>Heating</topic><topic>Integrated circuits</topic><topic>Nodular iron</topic><topic>Nonuniform</topic><topic>Runtime</topic><topic>Silicon</topic><topic>Temperature distribution</topic><topic>Thermal factors</topic><topic>Thermal management</topic><topic>Thermal simulation</topic><topic>Thermal simulators</topic><topic>Three dimensional</topic><topic>Very large scale integration</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Ting-Yuan</creatorcontrib><creatorcontrib>Chen, Charlie Chung-Ping</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore (Online service)</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Ting-Yuan</au><au>Chen, Charlie Chung-Ping</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>3-D Thermal-ADI: a linear-time chip level transient thermal simulator</atitle><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle><stitle>TCAD</stitle><date>2002-12-01</date><risdate>2002</risdate><volume>21</volume><issue>12</issue><spage>1434</spage><epage>1445</epage><pages>1434-1445</pages><issn>0278-0070</issn><eissn>1937-4151</eissn><coden>ITCSDI</coden><abstract>Recent study shows that the nonuniform thermal distribution not only has an impact on the substrate but also interconnects. Hence, three-dimensional (3-D) thermal analysis is crucial to analyze these effects. In this paper, the authors present and develop an efficient 3-D transient thermal simulator based on the alternating direction implicit (ADI) method for temperature estimation in a 3-D environment. Their simulator, 3D Thermal-ADI, not only has a linear runtime and memory requirement, but also is unconditionally stable. Detailed analysis of the 3-D nonhomogeneous cases and boundary conditions for on-chip VLSI applications are introduced and presented. Extensive experimental results show that our algorithm is not only orders of magnitude faster than the traditional thermal simulation algorithms but also highly accurate and memory efficient. The temperature profile of steady state can also be reached in several iterations. This software will be released via the web for public usage.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCAD.2002.804385</doi><tpages>12</tpages></addata></record> |
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subjects | Algorithms Computer programs Dielectric substrates Energy consumption Finite difference methods Heating Integrated circuits Nodular iron Nonuniform Runtime Silicon Temperature distribution Thermal factors Thermal management Thermal simulation Thermal simulators Three dimensional Very large scale integration |
title | 3-D Thermal-ADI: a linear-time chip level transient thermal simulator |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T09%3A41%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=3-D%20Thermal-ADI:%20a%20linear-time%20chip%20level%20transient%20thermal%20simulator&rft.jtitle=IEEE%20transactions%20on%20computer-aided%20design%20of%20integrated%20circuits%20and%20systems&rft.au=Wang,%20Ting-Yuan&rft.date=2002-12-01&rft.volume=21&rft.issue=12&rft.spage=1434&rft.epage=1445&rft.pages=1434-1445&rft.issn=0278-0070&rft.eissn=1937-4151&rft.coden=ITCSDI&rft_id=info:doi/10.1109/TCAD.2002.804385&rft_dat=%3Cproquest_RIE%3E907991046%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=884486364&rft_id=info:pmid/&rft_ieee_id=1097863&rfr_iscdi=true |