Nitride-based LEDs with p-InGaN capping layer

Nitride-based LEDs with p-InGaN capping layer

Nitride-based light-emitting diodes (LEDs) with Mg-doped In/sub 0.23/Ga/sub 0.77/N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In/sub 0.23/Ga/sub 0.77/N layers. It was also found that...

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Veröffentlicht in:IEEE transactions on electron devices 2003-12, Vol.50 (12), p.2567-2570
Hauptverfasser: Chang, S.J., Chen, C.H., Chang, P.C., Su, Y.K., Chen, P.C., Jhou, Y.D., Hung, H., Wang, S.M., Luang, B.R.
Format: Artikel
Sprache:eng
Schlagworte:
Capping
Charge carrier processes
Contact resistance
Devices
Electric potential
Electroluminescent materials/devices
Gallium materials/devices
Gallium nitrides
High temperature
Indium compounds
Light-emitting diodes
Magnesium
Magnesium materials/devices
Voltage
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Zusammenfassung:Nitride-based light-emitting diodes (LEDs) with Mg-doped In/sub 0.23/Ga/sub 0.77/N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In/sub 0.23/Ga/sub 0.77/N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In/sub 0.23/Ga/sub 0.77/N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In/sub 0.23/Ga/sub 0.77/N capping layer was much larger, particularly at elevated temperatures.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.820131