A study on the short-circuit capability of field-stop IGBTs

The short-circuit failure mechanism of 1200 V trench gate field-stop insulated gate bipolar transistor (IGBT) has been investigated in this paper. Experimental testing shows that most of the devices failed during the blocking state after a few hundred microseconds of the short-circuit turn-off condi...

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Veröffentlicht in:	IEEE transactions on electron devices 2003-06, Vol.50 (6), p.1525-1531
Hauptverfasser:	Otsuki, M., Onozawa, Y., Kanemaru, H., Seki, Y., Matsumoto, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Devices Failure analysis Failure modes Gates (circuits) Heat capacity Heating Insulated gate bipolar transistors Leakage current Leakage currents Power transistors Semiconductor device reliability Short circuits
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