Thermal solutions for discrete and wafer-level RF MEMS switch packages

In discrete radio frequency (RF) microelectromechanical systems (MEMS) packages, MEMS devices were fabricated on silicon or gallium arsenide (GaAs) chips. The chips were then attached to substrates with die attach materials. In wafer-level MEMS packages, the switches were manufactured directly on su...

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Veröffentlicht in:	IEEE transactions on advanced packaging 2003-08, Vol.26 (3), p.318-326
Hauptverfasser:	Mercado, L.L., Tien-Yu Tom Lee, Shun-Meen Kuo, Hause, V., Amrine, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Circuit properties Conducting materials Contacts Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gallium arsenide Integrated circuits Micro- and nanoelectromechanical devices (mems/nems) Microelectromechanical systems Micromechanical devices Packaging Radio frequency Radiofrequency microelectromechanical systems Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switches Switching, multiplexing, switched capacity circuits Thermal conductivity Wafer scale integration
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