Silicon micromechanical structures fabricated by electrochemical process
Silicon micromechanical structures were fabricated by means of sacrificial layers defined with porous silicon and masked by hydrogen ion implantation with adequate thermal annealing. The fabrication process to remove the porous silicon layers with diluted potassium hydroxide at room temperature does...
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| Veröffentlicht in: | IEEE sensors journal 2003-12, Vol.3 (6), p.722-727 |
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| container_title | IEEE sensors journal |
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| creator | Dantas, M.O.S. Galeazzo, E. Peres, H.E.M. Ramirez-Fernandez, F.J. |
| description | Silicon micromechanical structures were fabricated by means of sacrificial layers defined with porous silicon and masked by hydrogen ion implantation with adequate thermal annealing. The fabrication process to remove the porous silicon layers with diluted potassium hydroxide at room temperature does not cause damage to the remaining silicon microstructures, which are less than 1 /spl mu/m in thickness controlled by process parameters. |
| doi_str_mv | 10.1109/JSEN.2003.820365 |
| format | Article |
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The fabrication process to remove the porous silicon layers with diluted potassium hydroxide at room temperature does not cause damage to the remaining silicon microstructures, which are less than 1 /spl mu/m in thickness controlled by process parameters.</description><identifier>ISSN: 1530-437X</identifier><identifier>EISSN: 1558-1748</identifier><identifier>DOI: 10.1109/JSEN.2003.820365</identifier><identifier>CODEN: ISJEAZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Annealing ; Applied sciences ; Damage ; Electrochemical processes ; Electronics ; Exact sciences and technology ; Fabrication ; Hydrogen ; Ion implantation ; Micro- and nanoelectromechanical devices (mems/nems) ; Micromechanical devices ; Microstructure ; Porous silicon ; Potassium hydroxides ; Process control ; Process parameters ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The fabrication process to remove the porous silicon layers with diluted potassium hydroxide at room temperature does not cause damage to the remaining silicon microstructures, which are less than 1 /spl mu/m in thickness controlled by process parameters.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Damage</subject><subject>Electrochemical processes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Hydrogen</subject><subject>Ion implantation</subject><subject>Micro- and nanoelectromechanical devices (mems/nems)</subject><subject>Micromechanical devices</subject><subject>Microstructure</subject><subject>Porous silicon</subject><subject>Potassium hydroxides</subject><subject>Process control</subject><subject>Process parameters</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sensors</subject><subject>Silicon</subject><subject>Temperature control</subject><issn>1530-437X</issn><issn>1558-1748</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc9LwzAUx4soOKd3wUsRFC-d-dmkRxnTKUMPU_AW0vSFdfTHTNrD_ntTKww8eMoj-bzve_l-o-gSoxnGKLt_WS9eZwQhOpME0ZQfRRPMuUywYPJ4qClKGBWfp9GZ91uEcCa4mETLdVmVpm3iujSurcFsdFMaXcW-c73pegc-tjp34a6DIs73MVRgOteaDdQ_4C7U4P15dGJ15eHi95xGH4-L9_kyWb09Pc8fVomhknQJxzwn1BSCFlkmU8BWcsow1pYBCEmZ0AhsmqO8yAiDlFEJWSowQ9gaZDM6jW5H3TD3qwffqbr0BqpKN9D2XhHJWdCRAbz7F8RBleJA84Be_0G3be-a8A0lJSOEpYQECI1Q8Ml7B1btXFlrt1cYqSECNUSghgjUGEFoufnV1T5YZZ1uTOkPfZxmDAkRuKuRKwHg8EzCbiyl39eOjnM</recordid><startdate>20031201</startdate><enddate>20031201</enddate><creator>Dantas, M.O.S.</creator><creator>Galeazzo, E.</creator><creator>Peres, H.E.M.</creator><creator>Ramirez-Fernandez, F.J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sensors</topic><topic>Silicon</topic><topic>Temperature control</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dantas, M.O.S.</creatorcontrib><creatorcontrib>Galeazzo, E.</creatorcontrib><creatorcontrib>Peres, H.E.M.</creatorcontrib><creatorcontrib>Ramirez-Fernandez, F.J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE sensors journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dantas, M.O.S.</au><au>Galeazzo, E.</au><au>Peres, H.E.M.</au><au>Ramirez-Fernandez, F.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Silicon micromechanical structures fabricated by electrochemical process</atitle><jtitle>IEEE sensors journal</jtitle><stitle>JSEN</stitle><date>2003-12-01</date><risdate>2003</risdate><volume>3</volume><issue>6</issue><spage>722</spage><epage>727</epage><pages>722-727</pages><issn>1530-437X</issn><eissn>1558-1748</eissn><coden>ISJEAZ</coden><abstract>Silicon micromechanical structures were fabricated by means of sacrificial layers defined with porous silicon and masked by hydrogen ion implantation with adequate thermal annealing. The fabrication process to remove the porous silicon layers with diluted potassium hydroxide at room temperature does not cause damage to the remaining silicon microstructures, which are less than 1 /spl mu/m in thickness controlled by process parameters.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSEN.2003.820365</doi><tpages>6</tpages></addata></record> |
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| ispartof | IEEE sensors journal, 2003-12, Vol.3 (6), p.722-727 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Annealing Applied sciences Damage Electrochemical processes Electronics Exact sciences and technology Fabrication Hydrogen Ion implantation Micro- and nanoelectromechanical devices (mems/nems) Micromechanical devices Microstructure Porous silicon Potassium hydroxides Process control Process parameters Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors Silicon Temperature control |
| title | Silicon micromechanical structures fabricated by electrochemical process |
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