Impact of correlated generation of oxide defects on SILC and breakdown distributions
A three-dimensional Monte Carlo model for analysis of the reliability of flash memory arrays is developed, and applied to thin tunnel oxide (t/sub ox/ = 5 nm) samples. Good agreement between experimental data and simulation results are obtained, assuming a correlated defect generation in the tunnel...
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| Veröffentlicht in: | IEEE transactions on electron devices 2004-08, Vol.51 (8), p.1281-1287 |
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| container_end_page | 1287 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 51 |
| creator | Ielmini, D. Spinelli, A.S. Lacaita, A.L. van Duuren, M.J. |
| description | A three-dimensional Monte Carlo model for analysis of the reliability of flash memory arrays is developed, and applied to thin tunnel oxide (t/sub ox/ = 5 nm) samples. Good agreement between experimental data and simulation results are obtained, assuming a correlated defect generation in the tunnel oxide of our samples as evidenced in (Ielmini et al., 2004). The impact of correlated defect generation on dielectric breakdown is also addressed by means of a percolation model. It is shown that correlated generation provides no significant degradation of the breakdown lifetime with respect to Poisson statistics. |
| doi_str_mv | 10.1109/TED.2004.831959 |
| format | Article |
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Good agreement between experimental data and simulation results are obtained, assuming a correlated defect generation in the tunnel oxide of our samples as evidenced in (Ielmini et al., 2004). The impact of correlated defect generation on dielectric breakdown is also addressed by means of a percolation model. It is shown that correlated generation provides no significant degradation of the breakdown lifetime with respect to Poisson statistics.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2004.831959</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Computer simulation ; Correlation ; Defects ; Electric breakdown ; Leakage currents ; Monte Carlo methods ; Oxides ; Poisson distributions ; Reliability ; Samples ; Statistical analysis ; Statistical methods</subject><ispartof>IEEE transactions on electron devices, 2004-08, Vol.51 (8), p.1281-1287</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Good agreement between experimental data and simulation results are obtained, assuming a correlated defect generation in the tunnel oxide of our samples as evidenced in (Ielmini et al., 2004). The impact of correlated defect generation on dielectric breakdown is also addressed by means of a percolation model. It is shown that correlated generation provides no significant degradation of the breakdown lifetime with respect to Poisson statistics.</description><subject>Computer simulation</subject><subject>Correlation</subject><subject>Defects</subject><subject>Electric breakdown</subject><subject>Leakage currents</subject><subject>Monte Carlo methods</subject><subject>Oxides</subject><subject>Poisson distributions</subject><subject>Reliability</subject><subject>Samples</subject><subject>Statistical analysis</subject><subject>Statistical methods</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kTFPwzAQhS0EEqUwM7BEDDCl9cWOY4-oFKhUiYEyW45zQYE2LnYi4N_jKEhIDAyn091976S7R8g50BkAVfPN8naWUcpnkoHK1QGZQJ4XqRJcHJIJpSBTxSQ7JichvMZScJ5NyGa12xvbJa5OrPMet6bDKnnBFr3pGtcOA_fZVJhUWKPtQhJ7T6v1IjFtlZQezVvlPtqkakLnm7IfNOGUHNVmG_DsJ0_J891ys3hI14_3q8XNOrWMqy5lQrASAEUNErDkRW1UraQV1BhubC4yaQ0oWWFucllDBsLwUijKq0IyXrApuR737r177zF0etcEi9utadH1QUslMspUjCm5-pfMJFOghIrg5R_w1fW-jVdoKXl8NIs_nJL5CFnvQvBY671vdsZ_aaB6MENHM_Rghh7NiIqLUdEg4i_NoICcsm9lq4Qh</recordid><startdate>20040801</startdate><enddate>20040801</enddate><creator>Ielmini, D.</creator><creator>Spinelli, A.S.</creator><creator>Lacaita, A.L.</creator><creator>van Duuren, M.J.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Computer simulation Correlation Defects Electric breakdown Leakage currents Monte Carlo methods Oxides Poisson distributions Reliability Samples Statistical analysis Statistical methods |
| title | Impact of correlated generation of oxide defects on SILC and breakdown distributions |
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