Improved direct determination of MOSFET saturation voltage using Fourier techniques

Obtaining the right value of the saturation voltage V/sub DSAT/ is an important issue for MOSFET modeling. However, the usual procedures are hampered by the noise introduced in the derivation steps. In this paper, an alternative method is presented which uses Fourier methods to clean this noise and...

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Veröffentlicht in:	IEEE transactions on electron devices 2004-12, Vol.51 (12), p.2073-2077
Hauptverfasser:	Picos, R., Roca, M., Iniguez, B., Garcia-Moreno, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Compound structure devices Electronics Exact sciences and technology MOS devices MOSFETs parameter extraction saturation voltage extraction Semiconductor device modeling Semiconductor device noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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