Improved direct determination of MOSFET saturation voltage using Fourier techniques
Obtaining the right value of the saturation voltage V/sub DSAT/ is an important issue for MOSFET modeling. However, the usual procedures are hampered by the noise introduced in the derivation steps. In this paper, an alternative method is presented which uses Fourier methods to clean this noise and...
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| Veröffentlicht in: | IEEE transactions on electron devices 2004-12, Vol.51 (12), p.2073-2077 |
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| container_end_page | 2077 |
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| container_issue | 12 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 51 |
| creator | Picos, R. Roca, M. Iniguez, B. Garcia-Moreno, E. |
| description | Obtaining the right value of the saturation voltage V/sub DSAT/ is an important issue for MOSFET modeling. However, the usual procedures are hampered by the noise introduced in the derivation steps. In this paper, an alternative method is presented which uses Fourier methods to clean this noise and thus, obtain more accurate results. Besides, the proposed technique allows for estimating the difference between the intrinsic and the extrinsic values of V/sub DSAT/, due to the parasitic drain/source resistances, thus enabling the use of this method in deep submicrometer technologies, down to 0.1 /spl mu/m. |
| doi_str_mv | 10.1109/TED.2004.838317 |
| format | Article |
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However, the usual procedures are hampered by the noise introduced in the derivation steps. In this paper, an alternative method is presented which uses Fourier methods to clean this noise and thus, obtain more accurate results. Besides, the proposed technique allows for estimating the difference between the intrinsic and the extrinsic values of V/sub DSAT/, due to the parasitic drain/source resistances, thus enabling the use of this method in deep submicrometer technologies, down to 0.1 /spl mu/m.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2004.838317</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Compound structure devices ; Electronics ; Exact sciences and technology ; MOS devices ; MOSFETs ; parameter extraction ; saturation voltage extraction ; Semiconductor device modeling ; Semiconductor device noise ; Semiconductor electronics. Microelectronics. Optoelectronics. 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However, the usual procedures are hampered by the noise introduced in the derivation steps. In this paper, an alternative method is presented which uses Fourier methods to clean this noise and thus, obtain more accurate results. Besides, the proposed technique allows for estimating the difference between the intrinsic and the extrinsic values of V/sub DSAT/, due to the parasitic drain/source resistances, thus enabling the use of this method in deep submicrometer technologies, down to 0.1 /spl mu/m.</description><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>MOS devices</subject><subject>MOSFETs</subject><subject>parameter extraction</subject><subject>saturation voltage extraction</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor device noise</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Picos, R.</creatorcontrib><creatorcontrib>Roca, M.</creatorcontrib><creatorcontrib>Iniguez, B.</creatorcontrib><creatorcontrib>Garcia-Moreno, E.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Picos, R.</au><au>Roca, M.</au><au>Iniguez, B.</au><au>Garcia-Moreno, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved direct determination of MOSFET saturation voltage using Fourier techniques</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2004-12-01</date><risdate>2004</risdate><volume>51</volume><issue>12</issue><spage>2073</spage><epage>2077</epage><pages>2073-2077</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Obtaining the right value of the saturation voltage V/sub DSAT/ is an important issue for MOSFET modeling. 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| ispartof | IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2073-2077 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Compound structure devices Electronics Exact sciences and technology MOS devices MOSFETs parameter extraction saturation voltage extraction Semiconductor device modeling Semiconductor device noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Improved direct determination of MOSFET saturation voltage using Fourier techniques |
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