MOOSE: a physically based compact DC model of SOI LD MOSFETs for analogue circuit simulation
In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias. The device current is described by two main equations handling...
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Veröffentlicht in: | IEEE transactions on computer-aided design of integrated circuits and systems 2004-10, Vol.23 (10), p.1399-1410 |
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creator | D'Halleweyn, N.V.T. Benson, J. Redman-White, W. Mistry, K. Swanenberg, M. |
description | In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias. The device current is described by two main equations handling the MOS channel and the drift region, both of which are smooth and continuous in all operating regimes. Attention is also given to the modeling of inversion at the back oxide to ensure correct behavior is predicted for a source follower in power control applications ("high side operation"). A surface-potential-based formulation is used for the inversion/accumulation channel giving smooth transitions between different regions of operation, and care has been taken to ensure all expressions are smooth and infinitely differentiable to achieve the best possible convergence performance. Self (and coupled) heating effects exert a major influence over the behavior of power SOI devices, and these issues are incorporated in the model core in a consistent fashion. The model has been installed in a commercial SPICE-type circuit simulator and evaluated against individual devices and complete circuits fabricated in an industrial smart power SOI process. Accuracy is significantly improved with respect to the existing LDMOS models, and convergence behavior in switching and linear circuit simulations is comparable with industry standard models of this complexity. |
doi_str_mv | 10.1109/TCAD.2004.835125 |
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The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias. The device current is described by two main equations handling the MOS channel and the drift region, both of which are smooth and continuous in all operating regimes. Attention is also given to the modeling of inversion at the back oxide to ensure correct behavior is predicted for a source follower in power control applications ("high side operation"). A surface-potential-based formulation is used for the inversion/accumulation channel giving smooth transitions between different regions of operation, and care has been taken to ensure all expressions are smooth and infinitely differentiable to achieve the best possible convergence performance. Self (and coupled) heating effects exert a major influence over the behavior of power SOI devices, and these issues are incorporated in the model core in a consistent fashion. The model has been installed in a commercial SPICE-type circuit simulator and evaluated against individual devices and complete circuits fabricated in an industrial smart power SOI process. Accuracy is significantly improved with respect to the existing LDMOS models, and convergence behavior in switching and linear circuit simulations is comparable with industry standard models of this complexity.</description><identifier>ISSN: 0278-0070</identifier><identifier>EISSN: 1937-4151</identifier><identifier>DOI: 10.1109/TCAD.2004.835125</identifier><identifier>CODEN: ITCSDI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Channels ; Circuit simulation ; Circuits ; Computer simulation ; Convergence ; Coupling circuits ; Devices ; Equations ; Heating ; Inversions ; Mathematical models ; MOSFETs ; Power control ; Predictive models ; Silicon on insulator technology ; Studies ; Textile industry</subject><ispartof>IEEE transactions on computer-aided design of integrated circuits and systems, 2004-10, Vol.23 (10), p.1399-1410</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1336950$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1336950$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>D'Halleweyn, N.V.T.</creatorcontrib><creatorcontrib>Benson, J.</creatorcontrib><creatorcontrib>Redman-White, W.</creatorcontrib><creatorcontrib>Mistry, K.</creatorcontrib><creatorcontrib>Swanenberg, M.</creatorcontrib><title>MOOSE: a physically based compact DC model of SOI LD MOSFETs for analogue circuit simulation</title><title>IEEE transactions on computer-aided design of integrated circuits and systems</title><addtitle>TCAD</addtitle><description>In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias. The device current is described by two main equations handling the MOS channel and the drift region, both of which are smooth and continuous in all operating regimes. Attention is also given to the modeling of inversion at the back oxide to ensure correct behavior is predicted for a source follower in power control applications ("high side operation"). A surface-potential-based formulation is used for the inversion/accumulation channel giving smooth transitions between different regions of operation, and care has been taken to ensure all expressions are smooth and infinitely differentiable to achieve the best possible convergence performance. Self (and coupled) heating effects exert a major influence over the behavior of power SOI devices, and these issues are incorporated in the model core in a consistent fashion. The model has been installed in a commercial SPICE-type circuit simulator and evaluated against individual devices and complete circuits fabricated in an industrial smart power SOI process. Accuracy is significantly improved with respect to the existing LDMOS models, and convergence behavior in switching and linear circuit simulations is comparable with industry standard models of this complexity.</description><subject>Channels</subject><subject>Circuit simulation</subject><subject>Circuits</subject><subject>Computer simulation</subject><subject>Convergence</subject><subject>Coupling circuits</subject><subject>Devices</subject><subject>Equations</subject><subject>Heating</subject><subject>Inversions</subject><subject>Mathematical models</subject><subject>MOSFETs</subject><subject>Power control</subject><subject>Predictive models</subject><subject>Silicon on insulator technology</subject><subject>Studies</subject><subject>Textile industry</subject><issn>0278-0070</issn><issn>1937-4151</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0T1PwzAQBmALgUQp7EgsFgNMKT47_mJDbYFKrTK0bEiR4zjgKqlD3Az990QqEwNiuuW59053CF0DmQAQ_bCZPs0mlJB0ohgHyk_QCDSTSQocTtGIUKkSQiQ5RxcxbgmBlFM9Qu-rLFvPH7HB7echemvq-oALE12JbWhaY_d4NsVNKF2NQ4XX2QIvZ3iVrZ_nm4ir0GGzM3X46B22vrO93-Pom742ex92l-isMnV0Vz91jN6GtulrssxeFtOnZeJhWC8BLVWhreAFJ06rUklmCsILSiqwUBEB0liVpgCyVKUuhARNi0KaVPKqUoKN0f0xt-3CV-_iPm98tK6uzc6FPuZKC0pTqfgg7_6UVGkmQIh_QCaVTOUAb3_Bbei74SbDWMX08BDCBnRzRN45l7edb0x3yIExoTlh36t9g1M</recordid><startdate>20041001</startdate><enddate>20041001</enddate><creator>D'Halleweyn, N.V.T.</creator><creator>Benson, J.</creator><creator>Redman-White, W.</creator><creator>Mistry, K.</creator><creator>Swanenberg, M.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>7TB</scope><scope>FR3</scope><scope>7U5</scope><scope>F28</scope></search><sort><creationdate>20041001</creationdate><title>MOOSE: a physically based compact DC model of SOI LD MOSFETs for analogue circuit simulation</title><author>D'Halleweyn, N.V.T. ; Benson, J. ; Redman-White, W. ; Mistry, K. ; Swanenberg, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i1415-1978b9c65b50e98d873ab05b20f1c1f0617ac844117d8d9b67192bb7a475ff863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Channels</topic><topic>Circuit simulation</topic><topic>Circuits</topic><topic>Computer simulation</topic><topic>Convergence</topic><topic>Coupling circuits</topic><topic>Devices</topic><topic>Equations</topic><topic>Heating</topic><topic>Inversions</topic><topic>Mathematical models</topic><topic>MOSFETs</topic><topic>Power control</topic><topic>Predictive models</topic><topic>Silicon on insulator technology</topic><topic>Studies</topic><topic>Textile industry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>D'Halleweyn, N.V.T.</creatorcontrib><creatorcontrib>Benson, J.</creatorcontrib><creatorcontrib>Redman-White, W.</creatorcontrib><creatorcontrib>Mistry, K.</creatorcontrib><creatorcontrib>Swanenberg, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>D'Halleweyn, N.V.T.</au><au>Benson, J.</au><au>Redman-White, W.</au><au>Mistry, K.</au><au>Swanenberg, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>MOOSE: a physically based compact DC model of SOI LD MOSFETs for analogue circuit simulation</atitle><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle><stitle>TCAD</stitle><date>2004-10-01</date><risdate>2004</risdate><volume>23</volume><issue>10</issue><spage>1399</spage><epage>1410</epage><pages>1399-1410</pages><issn>0278-0070</issn><eissn>1937-4151</eissn><coden>ITCSDI</coden><abstract>In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias. The device current is described by two main equations handling the MOS channel and the drift region, both of which are smooth and continuous in all operating regimes. Attention is also given to the modeling of inversion at the back oxide to ensure correct behavior is predicted for a source follower in power control applications ("high side operation"). A surface-potential-based formulation is used for the inversion/accumulation channel giving smooth transitions between different regions of operation, and care has been taken to ensure all expressions are smooth and infinitely differentiable to achieve the best possible convergence performance. Self (and coupled) heating effects exert a major influence over the behavior of power SOI devices, and these issues are incorporated in the model core in a consistent fashion. The model has been installed in a commercial SPICE-type circuit simulator and evaluated against individual devices and complete circuits fabricated in an industrial smart power SOI process. Accuracy is significantly improved with respect to the existing LDMOS models, and convergence behavior in switching and linear circuit simulations is comparable with industry standard models of this complexity.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCAD.2004.835125</doi><tpages>12</tpages></addata></record> |
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subjects | Channels Circuit simulation Circuits Computer simulation Convergence Coupling circuits Devices Equations Heating Inversions Mathematical models MOSFETs Power control Predictive models Silicon on insulator technology Studies Textile industry |
title | MOOSE: a physically based compact DC model of SOI LD MOSFETs for analogue circuit simulation |
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