Electrical and optical properties of glow-discharge a-SiOx : H (x<2)
Hydrogenated amorphous silicon-oxygen alloy (a-SiO^sub x^ : H) films were deposited by r.f. glow-discharge decomposition of a SiH^sub 4^+CO^sub 2^ gas mixture at a substrate temperature of 300 °C. The optical band gaps of the samples were found to change between 1.65 and 2.73 eV by varying the oxyge...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2003-10, Vol.14 (10-12), p.737 |
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| creator | Baciolu, A Kodolbas, A O öktü, ö |
| description | Hydrogenated amorphous silicon-oxygen alloy (a-SiO^sub x^ : H) films were deposited by r.f. glow-discharge decomposition of a SiH^sub 4^+CO^sub 2^ gas mixture at a substrate temperature of 300 °C. The optical band gaps of the samples were found to change between 1.65 and 2.73 eV by varying the oxygen content from 4.5 to 64.2 at %. While both the room-temperature photo- and dark-conductivity decrease with oxygen alloying, for oxygen contents below 11.9 at % the measured conductivities are comparable to those of unalloyed a-Si : H. In contrast, the deep-defect density and Urbach parameter continuously increase with oxygen alloying.[PUBLICATION ABSTRACT] |
| doi_str_mv | 10.1023/A:1026155826628 |
| format | Article |
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The optical band gaps of the samples were found to change between 1.65 and 2.73 eV by varying the oxygen content from 4.5 to 64.2 at %. While both the room-temperature photo- and dark-conductivity decrease with oxygen alloying, for oxygen contents below 11.9 at % the measured conductivities are comparable to those of unalloyed a-Si : H. In contrast, the deep-defect density and Urbach parameter continuously increase with oxygen alloying.[PUBLICATION ABSTRACT]</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1023/A:1026155826628</identifier><language>eng</language><publisher>New York: Springer Nature B.V</publisher><ispartof>Journal of materials science. 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While both the room-temperature photo- and dark-conductivity decrease with oxygen alloying, for oxygen contents below 11.9 at % the measured conductivities are comparable to those of unalloyed a-Si : H. In contrast, the deep-defect density and Urbach parameter continuously increase with oxygen alloying.[PUBLICATION ABSTRACT]</abstract><cop>New York</cop><pub>Springer Nature B.V</pub><doi>10.1023/A:1026155826628</doi></addata></record> |
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| title | Electrical and optical properties of glow-discharge a-SiOx : H (x<2) |
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