Dislocation-related photoluminescence from processed Si

Dislocation-related photoluminescence (PL) from oxygen containing Czochralski silicon (Cz-Si) processed at up to 1,400 K (HT) under atmospheric and enhanced Ar pressures (HP, up to 1.2 GPa) has been investigated. Appropriate processing of Cz-Si results in a creation of oxygen precipitates and of rel...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2008-12, Vol.19 (Suppl 1), p.243-247
Hauptverfasser:	Misiuk, Andrzej, Zhuravlev, Konstantin S., Jung, Wojciech, Prujszczyk, Marek, Steinman, Edward A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Chemistry and Materials Science Materials Science Optical and Electronic Materials Semiconductors
Online-Zugang:	Volltext
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