Dislocation-related photoluminescence from processed Si

Dislocation-related photoluminescence from processed Si

Dislocation-related photoluminescence (PL) from oxygen containing Czochralski silicon (Cz-Si) processed at up to 1,400 K (HT) under atmospheric and enhanced Ar pressures (HP, up to 1.2 GPa) has been investigated. Appropriate processing of Cz-Si results in a creation of oxygen precipitates and of rel...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2008-12, Vol.19 (Suppl 1), p.243-247
Hauptverfasser: Misiuk, Andrzej, Zhuravlev, Konstantin S., Jung, Wojciech, Prujszczyk, Marek, Steinman, Edward A.
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Characterization and Evaluation of Materials
Chemistry and Materials Science
Materials Science
Optical and Electronic Materials
Semiconductors
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container_end_page 247
container_issue Suppl 1
container_start_page 243
container_title Journal of materials science. Materials in electronics
container_volume 19
creator Misiuk, Andrzej
Zhuravlev, Konstantin S.
Jung, Wojciech
Prujszczyk, Marek
Steinman, Edward A.
description Dislocation-related photoluminescence (PL) from oxygen containing Czochralski silicon (Cz-Si) processed at up to 1,400 K (HT) under atmospheric and enhanced Ar pressures (HP, up to 1.2 GPa) has been investigated. Appropriate processing of Cz-Si results in a creation of oxygen precipitates and of related defects, e.g., dislocations. Depending on processing conditions, the dislocation-related PL lines at about 0.81 and 0.87 eV are of the highest intensity while PL peaks also at 0.84 and 0.94 eV. The subsequent treatments of processed Cz-Si under pulse HP up to 2 GPa at room temperature affect PL intensity, also because of annihilation of non-radiative recombination centers formed at HT–(HP). Specific HT–HP treatments, influencing a creation of oxygen precipitates and a creation/annihilation of non-radiative recombination centers, make possible to tailor PL from Cz-Si.
doi_str_mv 10.1007/s10854-007-9509-9
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Appropriate processing of Cz-Si results in a creation of oxygen precipitates and of related defects, e.g., dislocations. Depending on processing conditions, the dislocation-related PL lines at about 0.81 and 0.87 eV are of the highest intensity while PL peaks also at 0.84 and 0.94 eV. The subsequent treatments of processed Cz-Si under pulse HP up to 2 GPa at room temperature affect PL intensity, also because of annihilation of non-radiative recombination centers formed at HT–(HP). Specific HT–HP treatments, influencing a creation of oxygen precipitates and a creation/annihilation of non-radiative recombination centers, make possible to tailor PL from Cz-Si.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10854-007-9509-9</doi><tpages>5</tpages></addata></record>
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subjects Characterization and Evaluation of Materials
Chemistry and Materials Science
Materials Science
Optical and Electronic Materials
Semiconductors
title Dislocation-related photoluminescence from processed Si
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