Structural, optoelectronic and electrochemical properties of nickel oxide films

Thin nickel oxide (NiO) films were deposited by the electron beam evaporation technique. The films were post annealed in air at 450–500 °C for 5 h and the effect of annealing on the structural, microstructural, electrical and optical properties were studied. X-ray diffraction studies indicated the p...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2009-10, Vol.20 (10), p.953-957
Hauptverfasser: Subramanian, B., Mohammed Ibrahim, M., Murali, K. R., Vidhya, V. S., Sanjeeviraja, C., Jayachandran, M.
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Sprache:eng
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