Structural, optoelectronic and electrochemical properties of nickel oxide films
Thin nickel oxide (NiO) films were deposited by the electron beam evaporation technique. The films were post annealed in air at 450–500 °C for 5 h and the effect of annealing on the structural, microstructural, electrical and optical properties were studied. X-ray diffraction studies indicated the p...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2009-10, Vol.20 (10), p.953-957 |
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Format: | Artikel |
Sprache: | eng |
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