n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates

n -ZnO:Ga/ i -ZnO/ p -Si heterojunction light-emitting diodes were fabricated on patterned Si substrates with increased interface area where hole carriers were transported to the i -ZnO layer. The patterned Si substrates were prepared by electrochemical etching, and the n -type ZnO:Ga films were dep...

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