Phase evolution and Sn-substitution in LiMn2O4 thin films prepared by pulsed laser deposition
LiMn 2 O 4 thin films prepared on a Pt/Ti/SiO 2 /Si(100) substrate by pulsed laser deposition were studied with focusing on the effects of different processing conditions and Sn substitution on phase evolvement and surface microstructure. Major experimental parameters include substrate temperature u...
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| Veröffentlicht in: | Journal of electroceramics 2009-10, Vol.23 (2-4), p.200-205 |
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| container_title | Journal of electroceramics |
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| creator | Shin, Dong Wook Choi, Ji-Won Cho, Yong Soo Yoon, Seok-Jin |
| description | LiMn
2
O
4
thin films prepared on a Pt/Ti/SiO
2
/Si(100) substrate by pulsed laser deposition were studied with focusing on the effects of different processing conditions and Sn substitution on phase evolvement and surface microstructure. Major experimental parameters include substrate temperature up to 770 °C and working oxygen pressure of 50–250 mTorr. LiMn
2
O
4
thin films became highly crystallized with increased grain sizes as the substrate temperature increased. Second phases such as LiMnO
2
and Li
2
Mn
2
O
4
were found at the temperature of 300 and 770 °C, respectively. As an optimum condition, films grown at 450 °C showed a homogeneous spinel phase with well-defined crystallinity and smooth surface. A high pressure of oxygen tended to promote crystallization and grain growth. Working pressure did not affect significantly the phase formation of the thin films except that unexpected LiMn
3
O
4
phase formed at the lowest oxygen pressure of 50 mTorr. Tin-substituted thin films showed lower Mn–O stretching vibrations, which suggests that more Li-ions can be inserted into vacant octahedral sites of the spinel structure. |
| doi_str_mv | 10.1007/s10832-007-9378-x |
| format | Article |
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2
O
4
thin films prepared on a Pt/Ti/SiO
2
/Si(100) substrate by pulsed laser deposition were studied with focusing on the effects of different processing conditions and Sn substitution on phase evolvement and surface microstructure. Major experimental parameters include substrate temperature up to 770 °C and working oxygen pressure of 50–250 mTorr. LiMn
2
O
4
thin films became highly crystallized with increased grain sizes as the substrate temperature increased. Second phases such as LiMnO
2
and Li
2
Mn
2
O
4
were found at the temperature of 300 and 770 °C, respectively. As an optimum condition, films grown at 450 °C showed a homogeneous spinel phase with well-defined crystallinity and smooth surface. A high pressure of oxygen tended to promote crystallization and grain growth. Working pressure did not affect significantly the phase formation of the thin films except that unexpected LiMn
3
O
4
phase formed at the lowest oxygen pressure of 50 mTorr. Tin-substituted thin films showed lower Mn–O stretching vibrations, which suggests that more Li-ions can be inserted into vacant octahedral sites of the spinel structure.</description><identifier>ISSN: 1385-3449</identifier><identifier>EISSN: 1573-8663</identifier><identifier>DOI: 10.1007/s10832-007-9378-x</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Ceramics ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Composites ; Crystallography and Scattering Methods ; Electrochemistry ; Glass ; Materials Science ; Natural Materials ; Optical and Electronic Materials ; Thin films</subject><ispartof>Journal of electroceramics, 2009-10, Vol.23 (2-4), p.200-205</ispartof><rights>Springer Science+Business Media, LLC 2007</rights><rights>Springer Science+Business Media, LLC 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c315t-e4fdae325e72f41f0200aef0706693d5d468050f55bdb9b17fbef544670cbed53</citedby><cites>FETCH-LOGICAL-c315t-e4fdae325e72f41f0200aef0706693d5d468050f55bdb9b17fbef544670cbed53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10832-007-9378-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10832-007-9378-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Shin, Dong Wook</creatorcontrib><creatorcontrib>Choi, Ji-Won</creatorcontrib><creatorcontrib>Cho, Yong Soo</creatorcontrib><creatorcontrib>Yoon, Seok-Jin</creatorcontrib><title>Phase evolution and Sn-substitution in LiMn2O4 thin films prepared by pulsed laser deposition</title><title>Journal of electroceramics</title><addtitle>J Electroceram</addtitle><description>LiMn
2
O
4
thin films prepared on a Pt/Ti/SiO
2
/Si(100) substrate by pulsed laser deposition were studied with focusing on the effects of different processing conditions and Sn substitution on phase evolvement and surface microstructure. Major experimental parameters include substrate temperature up to 770 °C and working oxygen pressure of 50–250 mTorr. LiMn
2
O
4
thin films became highly crystallized with increased grain sizes as the substrate temperature increased. Second phases such as LiMnO
2
and Li
2
Mn
2
O
4
were found at the temperature of 300 and 770 °C, respectively. As an optimum condition, films grown at 450 °C showed a homogeneous spinel phase with well-defined crystallinity and smooth surface. A high pressure of oxygen tended to promote crystallization and grain growth. Working pressure did not affect significantly the phase formation of the thin films except that unexpected LiMn
3
O
4
phase formed at the lowest oxygen pressure of 50 mTorr. Tin-substituted thin films showed lower Mn–O stretching vibrations, which suggests that more Li-ions can be inserted into vacant octahedral sites of the spinel structure.</description><subject>Ceramics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Composites</subject><subject>Crystallography and Scattering Methods</subject><subject>Electrochemistry</subject><subject>Glass</subject><subject>Materials Science</subject><subject>Natural Materials</subject><subject>Optical and Electronic Materials</subject><subject>Thin films</subject><issn>1385-3449</issn><issn>1573-8663</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kF9LwzAUxYMoOKcfwLfge_SmSZr0UYb_YDJBfZTQLonr6NKatLJ9e1Mq-OTT_d3knHPhIHRJ4ZoCyJtIQbGMJCQFk4rsj9CMCsmIynN2nJgpQRjnxSk6i3ELAIXidIY-XjZltNh-t83Q163HpTf41ZM4VLGv--mt9nhZP_tsxXG_SYurm13EXbBdGazB1QF3QxMTNSkrYGO7Ntaj8xyduDL9XPzOOXq_v3tbPJLl6uFpcbska0ZFTyx3prQsE1ZmjlMHGUBpHUjI84IZYXiuQIATojJVUVHpKusE57mEdWWNYHN0NeV2of0abOz1th2CTye1UjTnNCtoEtFJtA5tjME63YV6V4aDpqDHEvVUoh5xLFHvkyebPDFp_acNf8H_m34A75t2Cg</recordid><startdate>20091001</startdate><enddate>20091001</enddate><creator>Shin, Dong Wook</creator><creator>Choi, Ji-Won</creator><creator>Cho, Yong Soo</creator><creator>Yoon, Seok-Jin</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20091001</creationdate><title>Phase evolution and Sn-substitution in LiMn2O4 thin films prepared by pulsed laser deposition</title><author>Shin, Dong Wook ; Choi, Ji-Won ; Cho, Yong Soo ; Yoon, Seok-Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c315t-e4fdae325e72f41f0200aef0706693d5d468050f55bdb9b17fbef544670cbed53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Ceramics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Composites</topic><topic>Crystallography and Scattering Methods</topic><topic>Electrochemistry</topic><topic>Glass</topic><topic>Materials Science</topic><topic>Natural Materials</topic><topic>Optical and Electronic Materials</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shin, Dong Wook</creatorcontrib><creatorcontrib>Choi, Ji-Won</creatorcontrib><creatorcontrib>Cho, Yong Soo</creatorcontrib><creatorcontrib>Yoon, Seok-Jin</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of electroceramics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shin, Dong Wook</au><au>Choi, Ji-Won</au><au>Cho, Yong Soo</au><au>Yoon, Seok-Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Phase evolution and Sn-substitution in LiMn2O4 thin films prepared by pulsed laser deposition</atitle><jtitle>Journal of electroceramics</jtitle><stitle>J Electroceram</stitle><date>2009-10-01</date><risdate>2009</risdate><volume>23</volume><issue>2-4</issue><spage>200</spage><epage>205</epage><pages>200-205</pages><issn>1385-3449</issn><eissn>1573-8663</eissn><abstract>LiMn
2
O
4
thin films prepared on a Pt/Ti/SiO
2
/Si(100) substrate by pulsed laser deposition were studied with focusing on the effects of different processing conditions and Sn substitution on phase evolvement and surface microstructure. Major experimental parameters include substrate temperature up to 770 °C and working oxygen pressure of 50–250 mTorr. LiMn
2
O
4
thin films became highly crystallized with increased grain sizes as the substrate temperature increased. Second phases such as LiMnO
2
and Li
2
Mn
2
O
4
were found at the temperature of 300 and 770 °C, respectively. As an optimum condition, films grown at 450 °C showed a homogeneous spinel phase with well-defined crystallinity and smooth surface. A high pressure of oxygen tended to promote crystallization and grain growth. Working pressure did not affect significantly the phase formation of the thin films except that unexpected LiMn
3
O
4
phase formed at the lowest oxygen pressure of 50 mTorr. Tin-substituted thin films showed lower Mn–O stretching vibrations, which suggests that more Li-ions can be inserted into vacant octahedral sites of the spinel structure.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10832-007-9378-x</doi><tpages>6</tpages></addata></record> |
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| subjects | Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Composites Crystallography and Scattering Methods Electrochemistry Glass Materials Science Natural Materials Optical and Electronic Materials Thin films |
| title | Phase evolution and Sn-substitution in LiMn2O4 thin films prepared by pulsed laser deposition |
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