Synthesis and Physicochemical Properties of Nanocrystalline Silicon Carbonitride Films Deposited by Microwave Plasma from Organoelement Compounds
Nanocrystalline films of a ternary compound, namely, silicon carbonitride SiC^sub x^N^sub y^, are prepared by plasma-enhanced chemical vapor deposition at temperatures of 473-1173 K with the use of a complex gaseous mixture of hexamethyldisilazane Si^sub 2^NH(CH^sub 3^)^sub 6^, ammonia, and helium....
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| Veröffentlicht in: | Glass physics and chemistry 2005-07, Vol.31 (4), p.427-432 |
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| container_title | Glass physics and chemistry |
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| creator | Fainer, N. I. Kosinova, M. L. Rumyantsev, Yu. M. Maksimovskii, E. A. Kuznetsov, F. A. Kesler, V. G. Kirienko, V. V. Han, Bao-Shan Lu, Cheng |
| description | Nanocrystalline films of a ternary compound, namely, silicon carbonitride SiC^sub x^N^sub y^, are prepared by plasma-enhanced chemical vapor deposition at temperatures of 473-1173 K with the use of a complex gaseous mixture of hexamethyldisilazane Si^sub 2^NH(CH^sub 3^)^sub 6^, ammonia, and helium. The chemical and phase compositions and the physicochemical properties of the films are investigated using IR, Auger electron, and X-ray photoelectron spectroscopy; ellipsometry; synchrotron X-ray powder diffraction; electron and atomic-force microscopy; microhardness measurements with a nanoindenter; and electrical measurements. Correlations of the composition of the initial gas phase and the synthesis temperature with a number of functional properties of the SiC^sub x^N^sub y^ silicon carbonitride films are revealed.[PUBLICATION ABSTRACT] |
| doi_str_mv | 10.1007/s10720-005-0079-8 |
| format | Article |
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I. ; Kosinova, M. L. ; Rumyantsev, Yu. M. ; Maksimovskii, E. A. ; Kuznetsov, F. A. ; Kesler, V. G. ; Kirienko, V. V. ; Han, Bao-Shan ; Lu, Cheng</creator><creatorcontrib>Fainer, N. I. ; Kosinova, M. L. ; Rumyantsev, Yu. M. ; Maksimovskii, E. A. ; Kuznetsov, F. A. ; Kesler, V. G. ; Kirienko, V. V. ; Han, Bao-Shan ; Lu, Cheng</creatorcontrib><description>Nanocrystalline films of a ternary compound, namely, silicon carbonitride SiC^sub x^N^sub y^, are prepared by plasma-enhanced chemical vapor deposition at temperatures of 473-1173 K with the use of a complex gaseous mixture of hexamethyldisilazane Si^sub 2^NH(CH^sub 3^)^sub 6^, ammonia, and helium. The chemical and phase compositions and the physicochemical properties of the films are investigated using IR, Auger electron, and X-ray photoelectron spectroscopy; ellipsometry; synchrotron X-ray powder diffraction; electron and atomic-force microscopy; microhardness measurements with a nanoindenter; and electrical measurements. 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| subjects | Diffraction X-rays |
| title | Synthesis and Physicochemical Properties of Nanocrystalline Silicon Carbonitride Films Deposited by Microwave Plasma from Organoelement Compounds |
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