Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave Infrared

Our previous research has reported on the development of the first generation of quantum dots-in-a-well (DWELL) focal plane arrays (FPAs), which are based on InAs quantum dots (QDs) embedded in an InGaAs well having GaAs barriers, which have demonstrated spectral tunability via an externally applied...

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Veröffentlicht in:	IEEE transactions on electron devices 2011-07, Vol.58 (7), p.2022-2027
Hauptverfasser:	Andrews, J R, Restaino, S R, Teare, S W, Sharma, Y D, Jang, W, Vandervelde, T E, Brown, J S, Reisinger, A, Sundaram, M, Krishna, S, Lester, L
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Applied sciences Arrays Compound structure devices Design. Technologies. Operation analysis. Testing Devices Dwell Electronics Exact sciences and technology Focal plane Gallium arsenide Gallium arsenides Imaging devices Indium gallium arsenide Infrared image sensors Integrated circuits Lighting Noise Noise equivalent temperature difference Optoelectronic devices Pixel Quantum dots quantum dots (QDs) quantum wells (QWs) radiometry Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Studies Temperature measurement
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