Enhancement in light output of InGaN-based microhole array light-emitting diodes

InGaN-based microhole array light-emitting diodes (LEDs) with hole diameters (d) of 3-15 μm were fabricated using self-aligned etching. The effects of size on the device characteristics, including current density-voltage and light output-current density, were measured and compared with those of conv...

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Veröffentlicht in:	IEEE photonics technology letters 2005-06, Vol.17 (6), p.1163-1165
Hauptverfasser:	Hsueh, T.H., Sheu, J.K., Huang, H.W., Chu, J.Y., Kao, C.C., Kuo, H.C., Wang, S.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays Computer programs Current measurement Density Density measurement Devices Electric variables Etching Fabrication Gallium nitride GaN Light emitting diodes Lighting micro-light-emitting diode Microholes Optical arrays Optimization quantum well (QW) Ray tracing Size measurement Surface area
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