Dual-wavelength AlInGaAs-InP grating-outcoupled surface-emitting laser with an integrated two-dimensional photonic lattice outcoupler
Grating-outcoupled surface-emitting semiconductor lasers emitting two independent wavelengths separated by 9.5 nm from a common aperture in a monolithic crossed configuration is demonstrated. This configuration provides integrated wavelength multiplexing at /spl sim/1300 nm from a single aperture in...
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Veröffentlicht in: | IEEE photonics technology letters 2005-02, Vol.17 (2), p.270-272 |
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Sprache: | eng |
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