Dual-wavelength AlInGaAs-InP grating-outcoupled surface-emitting laser with an integrated two-dimensional photonic lattice outcoupler

Grating-outcoupled surface-emitting semiconductor lasers emitting two independent wavelengths separated by 9.5 nm from a common aperture in a monolithic crossed configuration is demonstrated. This configuration provides integrated wavelength multiplexing at /spl sim/1300 nm from a single aperture in...

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Veröffentlicht in:IEEE photonics technology letters 2005-02, Vol.17 (2), p.270-272
Hauptverfasser: Roh, S.D., Patterson, S.G., Amarasinghe, N.V., Masood, T., Castillega, J., McWilliams, S., Phan, D., Lee, D., Kirk, J.B., Evans, G.A.
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Sprache:eng
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Zusammenfassung:Grating-outcoupled surface-emitting semiconductor lasers emitting two independent wavelengths separated by 9.5 nm from a common aperture in a monolithic crossed configuration is demonstrated. This configuration provides integrated wavelength multiplexing at /spl sim/1300 nm from a single aperture into a single fiber, simplifying packaging and reducing cost.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.839023