Proposed scheme for polarization insensitive GaInNAs-based semiconductor optical amplifiers

A novel scheme for polarization insensitive GaInNAs-based semiconductor optical amplifiers is proposed in which TE and TM polarization gain is almost equal for GaInNAs quantum wells with GaInAs barriers. The proposed scheme involves the growth of GaInAs metamorphic layers on GaAs. Based on a k /spl...

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Veröffentlicht in:	IEEE journal of quantum electronics 2005-06, Vol.41 (6), p.817-822
Hauptverfasser:	Alexandropoulos, D., Adams, M.J., Hatzopoulos, Z., Syvridis, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Distributed feedback devices Exact sciences and technology Fundamental areas of phenomenology (including applications) GaInAs GaInNas Gallium arsenide Laser applications Laser feedback Laser optical systems: design and operation Optical fiber communication Optical polarization Optics Physics polarization insensitivity Quantum well lasers Resonators, cavities, amplifiers, arrays, and rings Semiconductor optical amplifiers semiconductor optical amplifiers (SOAs) Tellurium Temperature sensors
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