Using the Taguchi method to improve the brightness of AlGaInP MQW LED by wet oxidation

To increase the external quantum efficiency of a light-emitting diode (LED) while limiting its forward voltage (V f ), we prepared both (Al x Ga 1-x ) 0.5 In 0.5 P LED and buried oxides through selective wet oxidation of the AlAs layers of AlAs-GaAs distributed Bragg reflectors. The wet oxidation pr...

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Veröffentlicht in:	IEEE photonics technology letters 2006-08, Vol.18 (15), p.1642-1644
Hauptverfasser:	Lin, R.-M., Jen-Chih Li, Yi-Lun Chou, Meng-Chyi Wu
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaInP Brightness Carrier confinement Diodes Distributed Bragg reflectors Electric potential Insulation Light emitting diodes light-emitting diodes (LEDs) multiple quantum well (MQW) Optical materials Orthogonal arrays Oxidation Quantum well devices Robustness Taguchi methods Voltage Wet oxidation
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