AlGaInP-Based LEDs With a ^ -GaP Window Layer and a Thermally Annealed ITO Contact
In this paper, indium-tin-oxide (ITO) films were deposited on p-type GaP films with a AuBe-diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displa...
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| Veröffentlicht in: | IEEE journal of quantum electronics 2011-06, Vol.47 (6), p.803-809 |
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| creator | Lo, H M Shei, S C Zeng, X F Shoou-Jinn Chang Hsieh-Yen Lin |
| description | In this paper, indium-tin-oxide (ITO) films were deposited on p-type GaP films with a AuBe-diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 × 10 -4 ω-cm 2 . Furthermore, the specific contact resistance could be improved to 1.57 × 10 -4 ω-cm 2 when the sample post-ITO-deposition annealed at 400°C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGalnP-based light-emitting diodes with an AuBe-diffused metal layer. It was also found that the 20 mA forward voltages measured from LEDs with Device A, Device B, Device C and Device D were 1.97, 1.96, 1.95 and 2.66 V and the light output powers were 4.2, 5.7, 6.0 and 6.3 mW, respectively. |
| doi_str_mv | 10.1109/JQE.2011.2118744 |
| format | Article |
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Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 × 10 -4 ω-cm 2 . Furthermore, the specific contact resistance could be improved to 1.57 × 10 -4 ω-cm 2 when the sample post-ITO-deposition annealed at 400°C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGalnP-based light-emitting diodes with an AuBe-diffused metal layer. It was also found that the 20 mA forward voltages measured from LEDs with Device A, Device B, Device C and Device D were 1.97, 1.96, 1.95 and 2.66 V and the light output powers were 4.2, 5.7, 6.0 and 6.3 mW, respectively.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2011.2118744</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>AlGaInP ; Annealing ; AuBe-diffused layer ; Contact resistance ; Indium tin oxide ; Light emitting diodes ; light-emitting diode ; ohmic contact ; Power generation ; Semiconductor device measurement ; Temperature measurement</subject><ispartof>IEEE journal of quantum electronics, 2011-06, Vol.47 (6), p.803-809</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jun 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1350-e0aea5bbdb32d73a1b4f5c623035c8f07794f1d5b7f3ab4b880dc319e5fded293</citedby><cites>FETCH-LOGICAL-c1350-e0aea5bbdb32d73a1b4f5c623035c8f07794f1d5b7f3ab4b880dc319e5fded293</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5764940$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5764940$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lo, H M</creatorcontrib><creatorcontrib>Shei, S C</creatorcontrib><creatorcontrib>Zeng, X F</creatorcontrib><creatorcontrib>Shoou-Jinn Chang</creatorcontrib><creatorcontrib>Hsieh-Yen Lin</creatorcontrib><title>AlGaInP-Based LEDs With a ^ -GaP Window Layer and a Thermally Annealed ITO Contact</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>In this paper, indium-tin-oxide (ITO) films were deposited on p-type GaP films with a AuBe-diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 × 10 -4 ω-cm 2 . Furthermore, the specific contact resistance could be improved to 1.57 × 10 -4 ω-cm 2 when the sample post-ITO-deposition annealed at 400°C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGalnP-based light-emitting diodes with an AuBe-diffused metal layer. It was also found that the 20 mA forward voltages measured from LEDs with Device A, Device B, Device C and Device D were 1.97, 1.96, 1.95 and 2.66 V and the light output powers were 4.2, 5.7, 6.0 and 6.3 mW, respectively.</description><subject>AlGaInP</subject><subject>Annealing</subject><subject>AuBe-diffused layer</subject><subject>Contact resistance</subject><subject>Indium tin oxide</subject><subject>Light emitting diodes</subject><subject>light-emitting diode</subject><subject>ohmic contact</subject><subject>Power generation</subject><subject>Semiconductor device measurement</subject><subject>Temperature measurement</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFLAzEQRoMoWKt3wUvwvjWzSTbZY621VgqtUvFmmN1kact2V5Mt0n9vSoun4WPeNwOPkFtgAwCWP7y-jQcpAxikAFoJcUZ6IKVOQAE_Jz3GQCc55OqSXIWwiVEIzXrkfVhPcNoskkcMztLZ-CnQz3W3oki_aDLBRUyNbX_pDPfOU2xs3CxXzm-xrvd02DQO61icLud01DYdlt01uaiwDu7mNPvk43m8HL0ks_lkOhrOkhK4ZIlj6FAWhS14ahVHKEQlyyzljMtSV0ypXFRgZaEqjoUotGa25JA7WVln05z3yf3x7rdvf3YudGbT7nwTXxqdyUzLTLEIsSNU-jYE7yrz7ddb9HsDzBzEmSjOHMSZk7hYuTtW1s65f1yqTOSC8T-2Rmaz</recordid><startdate>201106</startdate><enddate>201106</enddate><creator>Lo, H M</creator><creator>Shei, S C</creator><creator>Zeng, X F</creator><creator>Shoou-Jinn Chang</creator><creator>Hsieh-Yen Lin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201106</creationdate><title>AlGaInP-Based LEDs With a ^ -GaP Window Layer and a Thermally Annealed ITO Contact</title><author>Lo, H M ; Shei, S C ; Zeng, X F ; Shoou-Jinn Chang ; Hsieh-Yen Lin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1350-e0aea5bbdb32d73a1b4f5c623035c8f07794f1d5b7f3ab4b880dc319e5fded293</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>AlGaInP</topic><topic>Annealing</topic><topic>AuBe-diffused layer</topic><topic>Contact resistance</topic><topic>Indium tin oxide</topic><topic>Light emitting diodes</topic><topic>light-emitting diode</topic><topic>ohmic contact</topic><topic>Power generation</topic><topic>Semiconductor device measurement</topic><topic>Temperature measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lo, H M</creatorcontrib><creatorcontrib>Shei, S C</creatorcontrib><creatorcontrib>Zeng, X F</creatorcontrib><creatorcontrib>Shoou-Jinn Chang</creatorcontrib><creatorcontrib>Hsieh-Yen Lin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lo, H M</au><au>Shei, S C</au><au>Zeng, X F</au><au>Shoou-Jinn Chang</au><au>Hsieh-Yen Lin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>AlGaInP-Based LEDs With a ^ -GaP Window Layer and a Thermally Annealed ITO Contact</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2011-06</date><risdate>2011</risdate><volume>47</volume><issue>6</issue><spage>803</spage><epage>809</epage><pages>803-809</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>In this paper, indium-tin-oxide (ITO) films were deposited on p-type GaP films with a AuBe-diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 × 10 -4 ω-cm 2 . Furthermore, the specific contact resistance could be improved to 1.57 × 10 -4 ω-cm 2 when the sample post-ITO-deposition annealed at 400°C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGalnP-based light-emitting diodes with an AuBe-diffused metal layer. It was also found that the 20 mA forward voltages measured from LEDs with Device A, Device B, Device C and Device D were 1.97, 1.96, 1.95 and 2.66 V and the light output powers were 4.2, 5.7, 6.0 and 6.3 mW, respectively.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JQE.2011.2118744</doi><tpages>7</tpages></addata></record> |
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| subjects | AlGaInP Annealing AuBe-diffused layer Contact resistance Indium tin oxide Light emitting diodes light-emitting diode ohmic contact Power generation Semiconductor device measurement Temperature measurement |
| title | AlGaInP-Based LEDs With a ^ -GaP Window Layer and a Thermally Annealed ITO Contact |
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