Bias Voltage Dependence of Magnetic Tunnel Junctions Comprising Double Barriers and CoFe/NiFeSiB/CoFe Free Layer

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer/AlO x /CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an Ni 16 Fe 62 Si 8 B 14 7 nm, Co 90 Fe 10 (fcc) 7 nm, or CoFe t 1 /NiFeSiB t 2 /CoFe t...

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Veröffentlicht in:	IEEE transactions on magnetics 2006-10, Vol.42 (10), p.2649-2651
Hauptverfasser:	You Song Kim, Byong Sun Chun, Deok-kee Kim, Jae Yeon Hwang, Soon Sub Kim, Rhee, J.R., Keewon Kim, Taewan Kim, Young Keun Kim
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Atomic force microscopy Atomic layer deposition Atoms & subatomic particles bias voltage dependence Coercive force Columns (structural) Couplings Cross-disciplinary physics: materials science rheology double-barrier magnetic tunnel junction (DMTJ) Electric potential Exact sciences and technology Iron Joining Magnetic tunneling Magnetism Materials science NiFeSiB Other topics in materials science Physics Roughness Tantalum Transmission electron microscopy Tunnel junctions Tunneling Tunneling magnetoresistance Voltage
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