Subharmonically Pumped Millimeter-Wave Upconverters Based on Heterostructure Barrier Varactors
A heterostructure barrier varactor subharmonic upconverter is investigated for the first time. Odd sidebands are suppressed due to the symmetric capacitance-voltage (C-V) characteristic of the varactor and high output power is possible through epitaxial stacking of barriers. The upconverter is pumpe...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2006-10, Vol.54 (10), p.3648-3653 |
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description | A heterostructure barrier varactor subharmonic upconverter is investigated for the first time. Odd sidebands are suppressed due to the symmetric capacitance-voltage (C-V) characteristic of the varactor and high output power is possible through epitaxial stacking of barriers. The upconverter is pumped using a millimeter-wave local oscillator, and can be used as a transmission-type double-sideband suppressed carrier modulator. The initial measured conversion loss is 8-16 dB at 100 and 200 GHz. The results are significantly improved by using external impedance tuners, which is verified through both simulations and measurements |
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Odd sidebands are suppressed due to the symmetric capacitance-voltage (C-V) characteristic of the varactor and high output power is possible through epitaxial stacking of barriers. The upconverter is pumped using a millimeter-wave local oscillator, and can be used as a transmission-type double-sideband suppressed carrier modulator. The initial measured conversion loss is 8-16 dB at 100 and 200 GHz. The results are significantly improved by using external impedance tuners, which is verified through both simulations and measurements</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2006.882890</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Barriers ; Capacitance-voltage characteristics ; Circuit properties ; Converters ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Frequency ; heterostructure barrier varactor (HBV) ; Heterostructures ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwaves ; Millimeter wave communication ; Millimeter wave measurements ; Millimeter wave technology ; millimeter-wave modulation ; Modulators ; Noise levels ; Oscillators ; Power generation ; Schottky diodes ; Signal convertors ; Stacking ; Submillimeter wave technology ; Upconverters ; Varactors</subject><ispartof>IEEE transactions on microwave theory and techniques, 2006-10, Vol.54 (10), p.3648-3653</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Odd sidebands are suppressed due to the symmetric capacitance-voltage (C-V) characteristic of the varactor and high output power is possible through epitaxial stacking of barriers. The upconverter is pumped using a millimeter-wave local oscillator, and can be used as a transmission-type double-sideband suppressed carrier modulator. The initial measured conversion loss is 8-16 dB at 100 and 200 GHz. The results are significantly improved by using external impedance tuners, which is verified through both simulations and measurements</description><subject>Applied sciences</subject><subject>Barriers</subject><subject>Capacitance-voltage characteristics</subject><subject>Circuit properties</subject><subject>Converters</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>heterostructure barrier varactor (HBV)</subject><subject>Heterostructures</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>Millimeter wave communication</subject><subject>Millimeter wave measurements</subject><subject>Millimeter wave technology</subject><subject>millimeter-wave modulation</subject><subject>Modulators</subject><subject>Noise levels</subject><subject>Oscillators</subject><subject>Power generation</subject><subject>Schottky diodes</subject><subject>Signal convertors</subject><subject>Stacking</subject><subject>Submillimeter wave technology</subject><subject>Upconverters</subject><subject>Varactors</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkM1LAzEQxYMoWKt3wcsiCF62TjabTXLU4he0KFj1Zsims7iyHzXZLfjfm7WFgqch835vJvMIOaUwoRTU1WK-WEwSgGwiZSIV7JER5VzEKhOwT0YAVMYqlXBIjrz_Cs-UgxyRj5c-_zSubpvSmqr6iZ77eoXLaF5WVVljhy5-N2uMXle2bdboQsNHN8YHpG2ihwFofed62_UOg-BciS56M87YrnX-mBwUpvJ4sq1j8np3u5g-xLOn-8fp9Sy2iWRdnEsm5NKiYgx4BlmRW6qwECxPJOeFgaUFkDmXuRJqmQLFlDGGFg3NlQ2uMbnczF259rtH3-m69BaryjTY9l7TTNBEcCUH9Pwf-tX2rgm_0zLjKUtTkQQINpAN53mHhV65sjbuR1PQQ956yFsPeetN3sFysZ1rfIiycKaxpd_5JBUZ_dt_tuFKRNzJIhwe1F9YXonY</recordid><startdate>20061001</startdate><enddate>20061001</enddate><creator>Xu, H.</creator><creator>Duan, Y.</creator><creator>Hesler, J.L.</creator><creator>Crowe, T.W.</creator><creator>Weikle, R.W.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Odd sidebands are suppressed due to the symmetric capacitance-voltage (C-V) characteristic of the varactor and high output power is possible through epitaxial stacking of barriers. The upconverter is pumped using a millimeter-wave local oscillator, and can be used as a transmission-type double-sideband suppressed carrier modulator. The initial measured conversion loss is 8-16 dB at 100 and 200 GHz. The results are significantly improved by using external impedance tuners, which is verified through both simulations and measurements</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2006.882890</doi><tpages>6</tpages></addata></record> |
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subjects | Applied sciences Barriers Capacitance-voltage characteristics Circuit properties Converters Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency heterostructure barrier varactor (HBV) Heterostructures Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter wave communication Millimeter wave measurements Millimeter wave technology millimeter-wave modulation Modulators Noise levels Oscillators Power generation Schottky diodes Signal convertors Stacking Submillimeter wave technology Upconverters Varactors |
title | Subharmonically Pumped Millimeter-Wave Upconverters Based on Heterostructure Barrier Varactors |
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