Theoretical investigation of negative differential conductance regime of silicon nanocrystal single-electron devices

The current-voltage characteristics of metal-insulator-Si quantum dot (QD)-insulator-metal structures are numerically simulated to investigate the design and the possible applications of single-electron devices taking advantage of Coulomb-blockade phenomenon. The simulation technique is based on a p...

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Veröffentlicht in:	IEEE transactions on electron devices 2006-05, Vol.53 (5), p.1268-1273
Hauptverfasser:	See, J., Dollfus, P., Galdin, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Admittance Applied sciences Bias Computer simulation Coulomb blockade Design engineering Devices Electronics Exact sciences and technology Mathematical models Molecular electronics, nanoelectronics Nanocrystals Quantum dots Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon single-electron devices tunneling Voltage Wave functions
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