Quantum-mechanical effects in trigate SOI MOSFETs
A self-consistent Poisson-Schro/spl uml/dinger solver is used to calculate the current in trigate n-channel silicon-on-insulator transistors with sections down to 2 nm /spl times/ 2 nm. The minimum energy of the subbands and the threshold voltage increase as the cross-sectional area of the device is...
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| Veröffentlicht in: | IEEE transactions on electron devices 2006-05, Vol.53 (5), p.1131-1136 |
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| container_end_page | 1136 |
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| container_issue | 5 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 53 |
| creator | Colinge, J.-P. Alderman, J.C. Weize Xiong Cleavelin, C.R. |
| description | A self-consistent Poisson-Schro/spl uml/dinger solver is used to calculate the current in trigate n-channel silicon-on-insulator transistors with sections down to 2 nm /spl times/ 2 nm. The minimum energy of the subbands and the threshold voltage increase as the cross-sectional area of the device is reduced and as the electron concentration in the channel is increased. As a consequence, the threshold voltage is higher than predicted by classical Poisson solvers. The current drive is diminished, and the subthreshold slope is degraded, especially in the devices with the smallest cross sections. |
| doi_str_mv | 10.1109/TED.2006.871872 |
| format | Article |
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The minimum energy of the subbands and the threshold voltage increase as the cross-sectional area of the device is reduced and as the electron concentration in the channel is increased. As a consequence, the threshold voltage is higher than predicted by classical Poisson solvers. The current drive is diminished, and the subthreshold slope is degraded, especially in the devices with the smallest cross sections.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2006.871872</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Channels ; Cross sections ; Devices ; Electronics ; Exact sciences and technology ; Mathematical analysis ; MOSFETs ; Quantum wires ; Semiconductor device modeling ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The minimum energy of the subbands and the threshold voltage increase as the cross-sectional area of the device is reduced and as the electron concentration in the channel is increased. As a consequence, the threshold voltage is higher than predicted by classical Poisson solvers. The current drive is diminished, and the subthreshold slope is degraded, especially in the devices with the smallest cross sections.</description><subject>Applied sciences</subject><subject>Channels</subject><subject>Cross sections</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Mathematical analysis</subject><subject>MOSFETs</subject><subject>Quantum wires</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon on insulator technology</subject><subject>silicon-on-insulator (SOI) technology</subject><subject>Solvers</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kM9LwzAUx4MoOKdnD16KoHjplpek-XGUOXUwGbJ5DmlMtaNrZ9Ie_O9N6UDwYC6P5H3eN7wPQpeAJwBYTTfzhwnBmE-kACnIERpBlolUccaP0QhjkKmikp6isxC28coZIyMEr52p226X7pz9NHVpTZW4onC2DUlZJ60vP0zrkvVqkbys1o_zTThHJ4Wpgrs41DF6i8-z53S5elrM7pepZQBtaqgCxZXE1mArOBeM5RSsK7gUBlOR5yQzTAKVmOPMwrvhRkYktpRVuaFjdDvk7n3z1bnQ6l0ZrKsqU7umC5pILDLgNIJ3_4LABRDBFJcRvf6DbpvO13ENLXkMi6eHpgNkfROCd4Xe-3Jn_LcGrHvVOqrWvWo9qI4TN4dYE6LAwpvaluF3TMTfCem5q4ErnXO_bU4YV4z-AI_zgts</recordid><startdate>20060501</startdate><enddate>20060501</enddate><creator>Colinge, J.-P.</creator><creator>Alderman, J.C.</creator><creator>Weize Xiong</creator><creator>Cleavelin, C.R.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon on insulator technology</topic><topic>silicon-on-insulator (SOI) technology</topic><topic>Solvers</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Colinge, J.-P.</creatorcontrib><creatorcontrib>Alderman, J.C.</creatorcontrib><creatorcontrib>Weize Xiong</creatorcontrib><creatorcontrib>Cleavelin, C.R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) Online</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Colinge, J.-P.</au><au>Alderman, J.C.</au><au>Weize Xiong</au><au>Cleavelin, C.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantum-mechanical effects in trigate SOI MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2006-05-01</date><risdate>2006</risdate><volume>53</volume><issue>5</issue><spage>1131</spage><epage>1136</epage><pages>1131-1136</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A self-consistent Poisson-Schro/spl uml/dinger solver is used to calculate the current in trigate n-channel silicon-on-insulator transistors with sections down to 2 nm /spl times/ 2 nm. The minimum energy of the subbands and the threshold voltage increase as the cross-sectional area of the device is reduced and as the electron concentration in the channel is increased. As a consequence, the threshold voltage is higher than predicted by classical Poisson solvers. The current drive is diminished, and the subthreshold slope is degraded, especially in the devices with the smallest cross sections.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2006.871872</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Channels Cross sections Devices Electronics Exact sciences and technology Mathematical analysis MOSFETs Quantum wires Semiconductor device modeling Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon on insulator technology silicon-on-insulator (SOI) technology Solvers Threshold voltage Transistors |
| title | Quantum-mechanical effects in trigate SOI MOSFETs |
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