Low-frequency noise in SOI four-gate transistors

Low-frequency noise characteristics of the silicon-on-insulator four-gate transistor [G/sup 4/-field-effect transistor] are reported. The noise power spectral density as a function of biasing conditions is presented and compared for surface and volume conduction modes. It is shown that, for the same...

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Veröffentlicht in:	IEEE transactions on electron devices 2006-04, Vol.53 (4), p.829-835
Hauptverfasser:	Akarvardar, K., Dufrene, B.M., Cristoloveanu, S., Gentil, P., Blalock, B.J., Mojarradi, M.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Channels Charge carrier mobility Density Drains Electronics Engineering Sciences Exact sciences and technology Fluctuation JFETs Junction field-effect transistor (JFET) low-frequency noise Micro and nanotechnologies Microelectronics MOSFET multiple-gate transistor Noise Semiconductor device noise Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon on insulator technology silicon-on-insulator (SOI) Spectra Transistors
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