Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets
A strained-Si/relaxed-SiGe structure was applied to laterally diffused MOSFETs (LDMOSFETs) in order to improve the PAE of cellular handset RF power-amplifier applications. The LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed-Si 0.85 Ge 0.15 structure. Despite the appearance of misfit d...
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| Veröffentlicht in: | IEEE transactions on electron devices 2006-12, Vol.53 (12), p.3136-3145 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 53 |
| creator | Kondo, M. Sugii, N. Hoshino, Y. Hirasawa, W. Kimura, Y. Miyamoto, M. Fujioka, T. Kamohara, S. Kondo, Y. Kimura, S. Yoshida, I. |
| description | A strained-Si/relaxed-SiGe structure was applied to laterally diffused MOSFETs (LDMOSFETs) in order to improve the PAE of cellular handset RF power-amplifier applications. The LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed-Si 0.85 Ge 0.15 structure. Despite the appearance of misfit dislocations, the thick strained-Si was essential for high efficiency and low leakage. The self-heating effects on the power performance were estimated to be negligible by using dynamic thermal simulation. The devices exhibited 46.6% PAE at a P out of 27.5 dBm for wideband code-division multiple-access handset applications, which was a 3.8-point improvement over Si controls |
| doi_str_mv | 10.1109/TED.2006.885669 |
| format | Article |
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The LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed-Si 0.85 Ge 0.15 structure. Despite the appearance of misfit dislocations, the thick strained-Si was essential for high efficiency and low leakage. The self-heating effects on the power performance were estimated to be negligible by using dynamic thermal simulation. The devices exhibited 46.6% PAE at a P out of 27.5 dBm for wideband code-division multiple-access handset applications, which was a 3.8-point improvement over Si controls</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2006.885669</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Laterally diffused MOSFETs (LDMOSFETs) ; misfit dislocations ; power amplifiers ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed-Si 0.85 Ge 0.15 structure. Despite the appearance of misfit dislocations, the thick strained-Si was essential for high efficiency and low leakage. The self-heating effects on the power performance were estimated to be negligible by using dynamic thermal simulation. The devices exhibited 46.6% PAE at a P out of 27.5 dBm for wideband code-division multiple-access handset applications, which was a 3.8-point improvement over Si controls</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Laterally diffused MOSFETs (LDMOSFETs)</subject><subject>misfit dislocations</subject><subject>power amplifiers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SiGe</subject><subject>strained-silicon</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpFkE1PAjEQhhujifhx9uClMfFYaLcf2x4NIphgIIDnTelOdXVltd2N-u8tQvQ0nbzPzKQPQheM9hmjZrAa3fYzSlVfa6mUOUA9JmVOjBLqEPUoZZoYrvkxOonxJbVKiKyHYPVcuVeybIOtNlCSZTVYQG2_fp9jwCnoXNsFwI3Hk-rpmcwh-Ca82Y0DvLjD8-YTAp7ePsyWd6NVxCnDQ6jrrrYBT-ymjNDGM3TkbR3hfF9P0WOChxMynY3vhzdT4rgWLQFblkb5XBpBLUCeeZU5q9be-VICNR5KwWlWGuGpBulEti6pMSzXTmjF1_wUXe32vofmo4PYFi9NFzbpZKGVZNLonCdosINcaGIM4Iv3UL3Z8F0wWmxVFkllsVVZ7FSmiev9WhudrX1In6_i_5jmXEjJEne54yoA-ItFcs1Fzn8AIct79Q</recordid><startdate>20061201</startdate><enddate>20061201</enddate><creator>Kondo, M.</creator><creator>Sugii, N.</creator><creator>Hoshino, Y.</creator><creator>Hirasawa, W.</creator><creator>Kimura, Y.</creator><creator>Miyamoto, M.</creator><creator>Fujioka, T.</creator><creator>Kamohara, S.</creator><creator>Kondo, Y.</creator><creator>Kimura, S.</creator><creator>Yoshida, I.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed-Si 0.85 Ge 0.15 structure. Despite the appearance of misfit dislocations, the thick strained-Si was essential for high efficiency and low leakage. The self-heating effects on the power performance were estimated to be negligible by using dynamic thermal simulation. The devices exhibited 46.6% PAE at a P out of 27.5 dBm for wideband code-division multiple-access handset applications, which was a 3.8-point improvement over Si controls</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2006.885669</doi><tpages>10</tpages></addata></record> |
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| subjects | Amplifiers Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Laterally diffused MOSFETs (LDMOSFETs) misfit dislocations power amplifiers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe strained-silicon Transistors |
| title | Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets |
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