Combination of e-Beam Lithography and of High Velocity AlN/Diamond-Layered Structure for SAW Filters in X Band

We report on the fabrication results of surface acoustic wave (SAW) devices operating at frequencies up to 8 GHz. In previous work, we have shown that high acoustic velocities (9 to 12 km/s) are obtained from the layered AIN/diamond structure. The interdigital transducers (IDT) made of aluminum with resolutions up to 250 nm were successfully patterned on AIN/diamond-layered structures with an adapted technological process. The uniformity and periodicity of IDT were confirmed by Held emission scanning electron microscopy and atomic force microscopy analyses. A highly oriented (002) piezoelectric aluminum nitride thin film was deposited on the nucleation side of the CVD diamond by magnetron sputtering technique. The X-ray diffraction effectuated on the AIN/diamond-layered structure exhibits high intensity peaks related to the (002) AlN and (111) diamond orientations. According to the calculated dispersion curves of velocity and the electromechanical coupling coefficient (K 2 ), the AlN layer thickness was chosen in order to combine high velocity and high K 2 . Experimental data extracted from the fabricated SAW devices match with theoretical values quite well.