Visible InGaN/GaN Quantum-Dot Materials and Devices
General properties of III-V nitride-based quantum dots (QDs) are presented, with a special emphasis on InGaN/GaN QDs for visible optoelectronic devices. Stranski-Krastanov GaN/AlN dots are first discussed as a prototypical system. It is shown that the optical transition energies are governed by a gi...
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| Veröffentlicht in: | Proceedings of the IEEE 2007-09, Vol.95 (9), p.1853-1865 |
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| creator | Grandjean, Nicolas Ilegems, Marc |
| description | General properties of III-V nitride-based quantum dots (QDs) are presented, with a special emphasis on InGaN/GaN QDs for visible optoelectronic devices. Stranski-Krastanov GaN/AlN dots are first discussed as a prototypical system. It is shown that the optical transition energies are governed by a giant quantum-confined Stark effect, which is the consequence of the presence of a large built-in internal electric field of several MV/cm. Then we move to InGaN/GaN QDs, reviewing the different fabrication approaches and their main optical properties. In particular, we focus on InGaN dots that are formed spontaneously by In composition fluctuations in InGaN quantum wells. Finally, some advantages and limitations of nitride laser diodes with active regions based on InGaN QDs are discussed, pointing out the requirements on dot uniformity and density in order to be able to exploit the expected quantum confinement effects in future devices. |
| doi_str_mv | 10.1109/JPROC.2007.900970 |
| format | Article |
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Stranski-Krastanov GaN/AlN dots are first discussed as a prototypical system. It is shown that the optical transition energies are governed by a giant quantum-confined Stark effect, which is the consequence of the presence of a large built-in internal electric field of several MV/cm. Then we move to InGaN/GaN QDs, reviewing the different fabrication approaches and their main optical properties. In particular, we focus on InGaN dots that are formed spontaneously by In composition fluctuations in InGaN quantum wells. 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(IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c457t-80e8ec7d9b39cd1875d1abff5cd618ef8cd72898e91e930527b85b3a350a26273</citedby><cites>FETCH-LOGICAL-c457t-80e8ec7d9b39cd1875d1abff5cd618ef8cd72898e91e930527b85b3a350a26273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4376303$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,778,782,794,27913,27914,54747</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4376303$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Grandjean, Nicolas</creatorcontrib><creatorcontrib>Ilegems, Marc</creatorcontrib><title>Visible InGaN/GaN Quantum-Dot Materials and Devices</title><title>Proceedings of the IEEE</title><addtitle>JPROC</addtitle><description>General properties of III-V nitride-based quantum dots (QDs) are presented, with a special emphasis on InGaN/GaN QDs for visible optoelectronic devices. 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Finally, some advantages and limitations of nitride laser diodes with active regions based on InGaN QDs are discussed, pointing out the requirements on dot uniformity and density in order to be able to exploit the expected quantum confinement effects in future devices.</description><subject>Density</subject><subject>Devices</subject><subject>Electric fields</subject><subject>Fluctuations</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>III-V semiconductor materials</subject><subject>III-V semiconductors</subject><subject>Indium gallium nitrides</subject><subject>InGaN alloy</subject><subject>laser diodes</subject><subject>light-emitting diodes</subject><subject>Optical device fabrication</subject><subject>Optical materials</subject><subject>Optoelectronic devices</subject><subject>photoluminescence</subject><subject>Prototypes</subject><subject>Quantum confinement</subject><subject>Quantum dot lasers</subject><subject>Quantum dots</subject><subject>quantum wells</subject><subject>Stark effect</subject><issn>0018-9219</issn><issn>1558-2256</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkU9Lw0AQxRdRsFY_gHgJnryknd3N_jtKq7VSrYp6DZvNBFLSpGYTwW9vYsSDlx6GgeH3Hm94hJxTmFAKZnr_9LKeTRiAmhgAo-CAjKgQOmRMyEMyAqA6NIyaY3Li_QYAuJB8RPh77vOkwGBZLuzjtJvgubVl027DedUED7bBOreFD2yZBnP8zB36U3KUdSc8-91j8nZ78zq7C1frxXJ2vQpdJFQTakCNTqUm4calVCuRUptkmXCppBoz7VLFtNFoKBoOgqlEi4RbLsAyyRQfk6vBd1dXHy36Jt7m3mFR2BKr1sdUKeCqU8r9qFSUcyZltB8F1qcSog9w-Q_dVG1ddj_HWkaMKtGZjgkdIFdX3teYxbs639r6q3OK-27in27ivpt46KbTXAyaHBH_-IgryYHzb1N4htI</recordid><startdate>20070901</startdate><enddate>20070901</enddate><creator>Grandjean, Nicolas</creator><creator>Ilegems, Marc</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20070901</creationdate><title>Visible InGaN/GaN Quantum-Dot Materials and Devices</title><author>Grandjean, Nicolas ; Ilegems, Marc</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c457t-80e8ec7d9b39cd1875d1abff5cd618ef8cd72898e91e930527b85b3a350a26273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Density</topic><topic>Devices</topic><topic>Electric fields</topic><topic>Fluctuations</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>GaN</topic><topic>III-V semiconductor materials</topic><topic>III-V semiconductors</topic><topic>Indium gallium nitrides</topic><topic>InGaN alloy</topic><topic>laser diodes</topic><topic>light-emitting diodes</topic><topic>Optical device fabrication</topic><topic>Optical materials</topic><topic>Optoelectronic devices</topic><topic>photoluminescence</topic><topic>Prototypes</topic><topic>Quantum confinement</topic><topic>Quantum dot lasers</topic><topic>Quantum dots</topic><topic>quantum wells</topic><topic>Stark effect</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Grandjean, Nicolas</creatorcontrib><creatorcontrib>Ilegems, Marc</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>Proceedings of the IEEE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Grandjean, Nicolas</au><au>Ilegems, Marc</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Visible InGaN/GaN Quantum-Dot Materials and Devices</atitle><jtitle>Proceedings of the IEEE</jtitle><stitle>JPROC</stitle><date>2007-09-01</date><risdate>2007</risdate><volume>95</volume><issue>9</issue><spage>1853</spage><epage>1865</epage><pages>1853-1865</pages><issn>0018-9219</issn><eissn>1558-2256</eissn><coden>IEEPAD</coden><abstract>General properties of III-V nitride-based quantum dots (QDs) are presented, with a special emphasis on InGaN/GaN QDs for visible optoelectronic devices. 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| subjects | Density Devices Electric fields Fluctuations Gallium nitride Gallium nitrides GaN III-V semiconductor materials III-V semiconductors Indium gallium nitrides InGaN alloy laser diodes light-emitting diodes Optical device fabrication Optical materials Optoelectronic devices photoluminescence Prototypes Quantum confinement Quantum dot lasers Quantum dots quantum wells Stark effect |
| title | Visible InGaN/GaN Quantum-Dot Materials and Devices |
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