Effect of Annealing on the Interfacial and Structural Properties of Amorphous Silicon-Hafnia Films

Chemical and physical properties of the interface formed between amorphous silicon ( a -Si) and hafnium oxide (HfO 2 ) were investigated using X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS). XRR showed that the interface layer formed between the a -Si and HfO 2 layer had a thick...

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Veröffentlicht in:	Metallurgical and materials transactions. A, Physical metallurgy and materials science Physical metallurgy and materials science, 2011, Vol.42 (1), p.71-75
Hauptverfasser:	Kohli, Sandeep, McCurdy, Patrick R., Rithner, Christopher D., Dorhout, Peter K., Dummer, Ann M., Menoni, Carmen S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Characterization and Evaluation of Materials Chemistry and Materials Science Experiments Materials Science Metallic Materials Nanotechnology Spectrum analysis Structural Materials Surfaces and Interfaces Symposium: Diffraction Studies of Advanced Materials Temperature Thin Films
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