Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers

Hall-effect measurements of n-channel MOS devices were used to determine the main scattering mechanisms limiting mobility in SiC MOSFETs. MOS-gated Hall characterization, which was performed as a function of gate bias and body bias, indicates that surface-roughness scattering and Coulomb scattering...

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Veröffentlicht in:	IEEE transactions on electron devices 2007-11, Vol.54 (11), p.2823-2829
Hauptverfasser:	Tilak, V., Matocha, K., Dunne, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bias Compound structure devices Constraining Coulomb friction Coulomb scattering Density Electric fields Electronics Exact sciences and technology Hall effect Logic gates Mathematical models MOS devices MOSFETs Scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide surface-roughness scattering Temperature measurement Transistors Voltage measurement
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