Impact of Hydrogenation of ZnO TFTs by Plasma-Deposited Silicon Nitride Gate Dielectric

Plasma-enhanced chemical vapor deposition grown silicon nitride gate insulator with high refractive index of 2.39 was employed as the source of hydrogen to hydrogenate zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate configuration. The hydrogenated TFTs exhibited a field-effect mobilit...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-10, Vol.55 (10), p.2736-2743
Hauptverfasser:	Remashan, K., Dae-Kue Hwang, Seong-Ju Park, Jae-Hyung Jang
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Dielectrics Electronics Exact sciences and technology Gates High-refractive silicon nitride hydrogenation Logic gates Microelectronic fabrication (materials and surfaces technology) R&D Refractive index Refractivity Research & development secondary ion mass spectroscopy (SIMS) Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon nitride Thin film transistors Transistors Zinc oxide zinc oxide (ZnO) thin-film transistors (TFTs) Zinc oxides
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