Accurate Extraction of Effective Channel Length and Source/Drain Series Resistance in Ultrashort-Channel MOSFETs by Iteration Method

This paper presents a new extraction method for effective channel length ( L eff ) and source/drain series resistance ( R SD ) in ultrashort-channel MOSFETs using an iterative process, which is a modified channel resistance method (CRM). Although conventional methods for extracting L eff and R SD ,...

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Veröffentlicht in:	IEEE transactions on electron devices 2008-10, Vol.55 (10), p.2779-2784
Hauptverfasser:	KIM, Junsoo, LEE, Jaehong, SONG, Ickhyun, YUN, Yeonam, JONG DUK LEE, PARK, Byung-Gook, SHIN, Hyungcheol
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Approximation Capacitance Channel resistance method (CRM) Channels Devices Drains effective channel length Electron devices Electronics Exact sciences and technology Extraction gate-channel capacitance Logic gates Methods mobility MOSFETs Radio frequency Resistance Scattering Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices source/drain series resistance Studies Transistors
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