Lateral Nonuniformity Effects of Border Traps on the Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors Subjected to High-Field Stresses
The lateral nonuniformity (LNU) effects of border traps are studied by exploring both the high- and low-frequency characteristics in N-type channel metal-oxide-semiconductor field-effect transistors. According to experimental data, the deterioration of nonuniformity is significantly enhanced at low...
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Veröffentlicht in: | IEEE transactions on electron devices 2008-06, Vol.55 (6), p.1366-1372 |
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Sprache: | eng |
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