Low Dark Count Single-Photon Avalanche Diode Structure Compatible With Standard Nanometer Scale CMOS Technology

A single-photon avalanche diode structure implemented in a 130-nm imaging process is reported. The device employs a p-well anode, rather than the commonly adopted p+, and a novel guard ring compatible with recent scaling trends in standard nanometer scale complementary metal-oxide-semiconductor tech...

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Veröffentlicht in:	IEEE photonics technology letters 2009-07, Vol.21 (14), p.1020-1022
Hauptverfasser:	Richardson, J.A., Grant, L.A., Henderson, R.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Avalanche diodes Biomedical imaging CMOS CMOS process CMOS technology Compatibility complementary metal-oxide-semiconductor (CMOS) integrated circuits Counting Devices Doping Fluorescence Guards image sensors Implants Integrated circuit technology Light emitting diodes Optical buffering Optical imaging p-n junctions photodetectors photodiodes Photons Sensor arrays
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Beschreibung
Zusammenfassung:	A single-photon avalanche diode structure implemented in a 130-nm imaging process is reported. The device employs a p-well anode, rather than the commonly adopted p+, and a novel guard ring compatible with recent scaling trends in standard nanometer scale complementary metal-oxide-semiconductor technologies. The 50-mum 2 active area device exhibits a dark count rate of 25 Hz at 20 deg C and a photon detection efficiency peak of 28% at 500 nm.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2009.2022059