Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection
Wide-bandgap semiconductors such as zinc selenide (ZnSe) have become popular for ultraviolet (UV) photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the...
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| container_title | Advances in OptoElectronics (Hindawi) |
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| creator | Naval, V. Smith, C. Ryzhikov, V. Naydenov, S. Alves, F. Karunasiri, G. |
| description | Wide-bandgap semiconductors such as zinc selenide (ZnSe) have become popular for ultraviolet (UV) photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320–400 nm) and UV-B (280–320 nm) filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50 mA/W and 10 mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110 mA/W at 375 nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area. |
| doi_str_mv | 10.1155/2010/619571 |
| format | Article |
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Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320–400 nm) and UV-B (280–320 nm) filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50 mA/W and 10 mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110 mA/W at 375 nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.</description><identifier>ISSN: 1687-563X</identifier><identifier>EISSN: 1687-5648</identifier><identifier>DOI: 10.1155/2010/619571</identifier><language>eng</language><publisher>Cairo, Egypt: Hindawi Puplishing Corporation</publisher><subject>Indium ; Light ; Noise ; Semiconductors ; Ultraviolet radiation ; Zinc</subject><ispartof>Advances in OptoElectronics (Hindawi), 2010-01, Vol.2010 (2010), p.1-5</ispartof><rights>Copyright © 2010 V. Naval et al.</rights><rights>Copyright © 2010 V. Naval et al. V. Naval et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a421t-1ea2da91ebf0e482bd4982ec5e421b2809f497651584577a82b8eba2690e86a73</citedby><cites>FETCH-LOGICAL-a421t-1ea2da91ebf0e482bd4982ec5e421b2809f497651584577a82b8eba2690e86a73</cites><orcidid>0000-0002-5585-763X ; 0000-0002-2387-1680</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><contributor>Cao, Xian</contributor><creatorcontrib>Naval, V.</creatorcontrib><creatorcontrib>Smith, C.</creatorcontrib><creatorcontrib>Ryzhikov, V.</creatorcontrib><creatorcontrib>Naydenov, S.</creatorcontrib><creatorcontrib>Alves, F.</creatorcontrib><creatorcontrib>Karunasiri, G.</creatorcontrib><title>Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection</title><title>Advances in OptoElectronics (Hindawi)</title><description>Wide-bandgap semiconductors such as zinc selenide (ZnSe) have become popular for ultraviolet (UV) photodetectors due to their broad UV spectral response. 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The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.</description><subject>Indium</subject><subject>Light</subject><subject>Noise</subject><subject>Semiconductors</subject><subject>Ultraviolet radiation</subject><subject>Zinc</subject><issn>1687-563X</issn><issn>1687-5648</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RHX</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqF0E1LAzEQBuAgCpbak2dh8aisTbL5PLb1EwoeakFEWNLdWZq6bmqSKv33btlS8ORphpmHGXgROif4hhDOhxQTPBREc0mOUI8IJVMumDo-9NnrKRqEsMIYE0aE1KKH3t9sUyQzqKGxJaRjE6BMZsXSxfixTcbGews-uYUIRXQ-JJXzybyO3nxbV0NMR4lpyj-T8V5b15yhk8rUAQb72kfz-7uXyWM6fX54moymqWGUxJSAoaXRBBYVBqboomRaUSg4tOsFVVhXTEvBCVeMS2laoWBhqNAYlDAy66PL7u7au68NhJiv3MY37ctccaGlply36LpDhXcheKjytbefxm9zgvNdgPkuwLwLsNVXnV7apjQ_9h980WFoCVTmgNnufZb9AltyeHw</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Naval, V.</creator><creator>Smith, C.</creator><creator>Ryzhikov, V.</creator><creator>Naydenov, S.</creator><creator>Alves, F.</creator><creator>Karunasiri, G.</creator><general>Hindawi Puplishing Corporation</general><general>Hindawi Publishing Corporation</general><general>Hindawi Limited</general><scope>ADJCN</scope><scope>AHFXO</scope><scope>RHU</scope><scope>RHW</scope><scope>RHX</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7RQ</scope><scope>7SP</scope><scope>7XB</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>CWDGH</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope><scope>U9A</scope><orcidid>https://orcid.org/0000-0002-5585-763X</orcidid><orcidid>https://orcid.org/0000-0002-2387-1680</orcidid></search><sort><creationdate>20100101</creationdate><title>Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection</title><author>Naval, V. ; 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| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Wiley Online Library (Open Access Collection); Alma/SFX Local Collection |
| subjects | Indium Light Noise Semiconductors Ultraviolet radiation Zinc |
| title | Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection |
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